Datasheet > TSB12N06AT

TSB12N06AT

更新时间： 2024-09-17 15:19:35

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子栅
页数	文件大小	规格书
7页	394K
描述
通过采用最先进的沟槽栅工艺技术和完美的结构设计，紫光微电子的MOSFET实现功率密度最大化，从而大幅度降低电流传导过程中的导通功率损耗。同时，电流在芯片元胞当中的流通会更加均匀稳定，其有效

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TSB12N06AT 数据手册

TSB12N06AT

Wuxi Unigroup Microelectronics Co.,Ltd.

60V N-Channel Trench MOSFET

General Description

Product Summary

V_DS

60V

l Trench Power SGT technology

l Very low on-resistance R_DS(ON)

l Low Gate Charge

I_D(at V_GS=10V)

60A

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

< 9mΩ

< 13.5mΩ

l Excellent Gate Charge x R_DS(ON)Product

Applications

100% UIS Tested

l High Frequency Switching and Synchronous Rectification

TO-263

Part Number

Package Type

Form

Marking

TSB12N06AT

TO-263

Tape & Reel

D12N06AT

Absolute Maximum Ratings (T_A=25ºC unless otherwise noted)

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25ºC

Continuous Drain Current

I_D

T_C=100ºC

Pulsed Drain Current

I_DM

I_AS

240

Avalanche Current

Single Pulse Avalanche Energy

L =0.3mH

T_C=25ºC

E_AS

ºC

56.5

Power Dissipation

P_D

T_C=100ºC

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

T_J, T_STG

-55 to 175

Symbol

R_ƟJC

Maximum

Units

Maximum Junction-to-Case

Steady-State

1.7

ºC/W

Maximum Junction-to-Ambient

R_ƟJA

V1.0

www.tsinghuaicwx.com

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