Datasheet > TSA9N90M

TSA9N90M

更新时间： 2024-05-23 22:21:58

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TSA9N90M 数据手册

TSA9N90M

900V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

• 9.0A,900V,Max.R_DS(on)=1.40Ω @ V_GS=10V

• Low gate charge(typical 52nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

V_DSS

Parameter

Value

Units

Drain-Source Voltage

Gate-Source Voltage

900

V_GS

T_C= 25℃

T_C= 100℃

(Note 1)

(Note 2)

(Note 1)

9.0

I_D

Drain Current

5.7

I_DM

E_AS

Pulsed Drain Current

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Repetitive Avalanche current

Power Dissipation (T_C= 25℃)

900

E_AR

I_AR

P_D

130

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8” from case for 5 seconds

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

℃/W

R_θJC

Thermal Resistance,Junction-to-Case

0.96

Thermal Resistance,Junction-to-Ambient

R_θJA

Ver.B2

www.truesemi.com

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