Datasheet > TSA23N50M

TSA23N50M

更新时间： 2024-09-14 17:15:39

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TO-3P

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TSA23N50M 数据手册

TSA23N50M

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Truesemi‘s

advanced planar stripe DMOS technology.

• 23A,500V,Max.R_DS(on)=0.26Ω @ V_GS=10V

• Low gate charge(typical 70nC)

• High ruggedness

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge

topology.

Absolute Maximum Ratings

T_J=25℃ unless otherwise specified

Symbol

V_DSS

Parameter

Value

500

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±30

T_C= 25℃

T_C= 100℃

(Note 1)

(Note 2)

(Note 1)

(Note 3)

I_D

Drain Current

I_DM

E_AS

Pulsed Drain Current

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

1110

E_AR

dv/dt

4.5

280

Power Dissipation (T_C= 25℃)

-Derate above 25℃

P_D

W/℃

℃

2.3

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

℃

300

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

Thermal Resistance,Junction-to-Case

0.24

0.44

℃/W

Thermal Resistance,Case-to-Sink Typ.

Thermal Resistance,Junction-to-Ambient

℃/W

R_θCS

R_θJA

Ver.B2

www.truesemi.com

12 3 4 5 6

中文翻译

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