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TS902C3R-TE24R PDF预览

TS902C3R-TE24R

更新时间: 2024-09-17 20:09:03
品牌 Logo 应用领域
富士电机 - FUJI 二极管
页数 文件大小 规格书
6页 439K
描述
Rectifier Diode, 1 Phase, 2 Element, 300V V(RRM), Silicon, PLASTIC PACKAGE-3

TS902C3R-TE24R 技术参数

生命周期:Active包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:40 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.035 µs表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

TS902C3R-TE24R 数据手册

 浏览型号TS902C3R-TE24R的Datasheet PDF文件第2页浏览型号TS902C3R-TE24R的Datasheet PDF文件第3页浏览型号TS902C3R-TE24R的Datasheet PDF文件第4页浏览型号TS902C3R-TE24R的Datasheet PDF文件第5页浏览型号TS902C3R-TE24R的Datasheet PDF文件第6页 
http://www.fujisemi.com  
FUJI Diode  
TS902C3R-TE24R  
Low-Loss Fast Recovery Diode  
Maximum Rating and Characteristics  
Maximum ratings (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Ratings  
Units  
Repetitive peak reverse voltage  
VRRM  
-
300  
V
50Hz Square wave duty =1/2  
Tc = 115 ˚C  
Average output current  
Io  
10*  
A
Non-repetitive forward surge current**  
Operating junction temperature  
Storage temperature  
I
FSM  
Sine wave, 10ms 1shot  
40  
150  
A
Tj  
-
-
˚C  
˚C  
Tstg  
-40 to +150  
Note* Out put current of center tap full wave connection.  
Note** Rating per element  
Electrical characteristics (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Maximum  
1.2  
Units  
V
Forward voltage***  
Reverse current***  
V
F
I = 5 A  
F
I
R
V
R
=VRRM  
100  
mA  
µs  
Reverse recovery time***  
Thermal resistance  
Note*** Rating per element  
trr  
I
F=0.1A,I  
R
=0.2A,Irec=0.05A  
0.035  
2.5  
Rth(j-c)  
Junction to case  
˚C/W  
Mechanical characteristics  
Item  
Conditions  
Maximum  
Units  
Approximate mass  
-
1.6  
g
1

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