生命周期: | Active | 包装说明: | PLASTIC PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.76 | Is Samacsys: | N |
应用: | HIGH VOLTAGE | 配置: | COMMON CATHODE, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | R-PSSO-G2 | 最大非重复峰值正向电流: | 150 A |
元件数量: | 2 | 相数: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最大输出电流: | 20 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 150 V |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | GULL WING | 端子位置: | SINGLE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TS868C04R | FUJI |
获取价格 |
Low IR Schottky barrier diode | |
TS868C06R | FUJI |
获取价格 |
Low IR Schottky barrier diode | |
TS868C08R | FUJI |
获取价格 |
Schottky Barrier Diode | |
TS868C08R-P | FUJI |
获取价格 |
Rectifier Diode, 1 Phase, 2 Element, 80V V(RRM), Silicon, PLASTIC, TPACK-3 | |
TS868C10R | FUJI |
获取价格 |
Low IR Schottky barrier diode | |
TS868C12R | FUJI |
获取价格 |
High Voltage Schottky barrier diode | |
TS868C15R | FUJI |
获取价格 |
High Voltage Schottky barrier diode | |
TS87C196KB | INTEL |
获取价格 |
Microcontroller, 16-Bit, UVPROM, 12MHz, CMOS, PQFP80 | |
TS87C196KC | INTEL |
获取价格 |
Microcontroller, 16-Bit, OTPROM, 8096 CPU, 16MHz, CMOS, PQFP80, QFP-80 | |
TS87C196KC20 | INTEL |
获取价格 |
Microcontroller, 16-Bit, OTPROM, 8096 CPU, 20MHz, CMOS, PQFP80, QFP-80 |