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TS820-700T PDF预览

TS820-700T

更新时间: 2024-11-18 22:49:31
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页数 文件大小 规格书
9页 164K
描述
8A SCRs

TS820-700T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.63
Is Samacsys:N其他特性:SENSITIVE GATE
外壳连接:ANODE配置:SINGLE
关态电压最小值的临界上升速率:5 V/us最大直流栅极触发电流:0.2 mA
最大直流栅极触发电压:0.8 V最大维持电流:5 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3通态非重复峰值电流:73 A
元件数量:1端子数量:3
最大通态电流:5000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:8 A断态重复峰值电压:700 V
重复峰值反向电压:700 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

TS820-700T 数据手册

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TN8, TS8 and TYNx08 Series  
®
SENSITIVE & STANDARD  
8A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
8
Unit  
G
I
A
T(RMS)  
K
V
/V  
600 to 1000  
0.2 to 15  
V
DRM RRM  
A
A
I
mA  
GT  
K
A
G
DESCRIPTION  
K
A
IPAK  
(TS8-H)  
(TN8-H)  
DPAK  
(TS8-B)  
(TN8-B)  
G
Available either in sensitive (TS8) or standard  
(TN8 / TYN) gate triggering levels, the 8A SCR  
series is suitable to fit all modes of control, found  
in applications such as overvoltage crowbar  
protection, motor control circuits in power tools  
and kitchen aids, inrush current limiting circuits,  
capacitive discharge ignition and voltage  
regulation circuits...  
A
A
K
K
A
A
Available in through-hole or surface-mount  
packages, they provide an optimized performance  
in a limited space area.  
G
G
TO-220AB  
(TYNx)  
TO-220AB  
(TS8-T)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 110°C  
Tc = 110°C  
8
5
A
A
IT  
Average on-state current (180° conduction angle)  
(AV)  
TS8/TN8 TYN  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
73  
70  
100  
95  
TSM  
Tj = 25°C  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
24.5  
45  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage (for TN8 & TYN only)  
5
RGM  
April 2002 - Ed: 4A  
1/9  

TS820-700T 替代型号

型号 品牌 替代类型 描述 数据表
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