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TS5A3159-EP PDF预览

TS5A3159-EP

更新时间： 2024-11-06 03:58:15
品牌 Logo 应用领域
德州仪器 - TI 开关光电二极管
页数 文件大小 规格书
22页 364K
描述
1-ヘ SPDT ANALOG SWITCH

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中文翻译

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TS5A3159-EP 数据手册

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TS5A3159-EP  
1-Ω SPDT ANALOG SWITCH  
www.ti.com  
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006  
FEATURES  
•
•
•
Low Total Harmonic Distortion  
•
Controlled Baseline  
1.65-V to 5.5-V Single-Supply Operation  
– One Assembly/Test Site, One Fabrication  
Site  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
•
Enhanced Diminishing Manufacturing  
Sources (DMS) Support  
•
ESD Performance Tested Per JESD 22  
– 2000-V Human-Body Model  
(A114-B, Class II)  
•
•
•
•
•
•
•
Enhanced Product-Change Notification  
(1)  
Qualification Pedigree  
– 1000-V Charged-Device Model (C101)  
Specified Break-Before-Make Switching  
Low ON-State Resistance (1 Ω)  
Control Inputs Are 5-V Tolerant  
Low Charge Injection  
APPLICATIONS  
•
•
•
Cell Phones  
PDAs  
Portable Instrumentation  
Excellent ON-State Resistance Matching  
SOT-23 PACKAGE  
(TOP VIEW)  
(1) Component qualification in accordance with JEDEC and  
industry standards to ensure reliable operation over an  
extended temperature range. This includes, but is not liited to,  
Highly Accelerated Stress Test (HAST) or biased 85/85,  
temperature cycle, autoclave or unbiased HAST,  
NO  
GND  
NC  
1
2
3
6
5
4
IN  
electromigration, bond intermetallic life, and mold compound  
life. Such qualification testing should not be viewed as  
justifying use of this componenet beyond specified  
performance and environmental limits.  
V
+
COM  
DESCRIPTION/ORDERING INFORMATION  
The TS5A3159-EP is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to  
5.5 V. The device offers a low ON-state resistance and an excellent ON-state resistance matching with the  
break-before-make feature to prevent signal distortion during the transferring of a signal from one channel to  
another. The device has excellent total harmonic distortion (THD) performance and consumes very low power.  
These features make this device suitable for portable audio applications.  
Summary of Characteristics(1)  
2:1 Multiplexer/  
Configuration  
Demultiplexer  
(1 × SPDT)  
Number of channels  
1
1.1 Ω  
ON-state resistance (ron  
)
ON-state resistance match (∆ron  
ON-state resistance flatness (ron(flat)  
Turn-on/turn-off time (tON/tOFF  
)
0.1 Ω  
)
0.15 Ω  
)
20 ns/15 ns  
12 ns  
Break-before-make time (tBBM  
Charge injection (QC)  
Bandwidth (BW)  
)
36 pC  
100 MHz  
–65 dB at 1 MHz  
–66 dB at 1 MHz  
0.01%  
OFF isolation (OISO  
Crosstalk (XTALK  
)
)
Total harmonic distortion (THD)  
Leakage current (INO(OFF)/(INC(OFF)  
Package option  
)
±20 nA  
6-pin DBV  
(1) V+ = 5 V and TA = 25°C  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2005–2006, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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TS5A3159-EP 替代型号

型号 品牌 替代类型 描述 数据表
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