Datasheet > TS4405P

TS4405P

更新时间： 2024-11-26 03:58:15

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
3页	149K
描述
Single P-Channel 1.8V Specified MicroSURF⑩

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中文翻译

获取价格

技术参数
数据手册

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TS4405P 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

TS4405P 数据手册

PRELIMINARY DATA SHEET

For information only

TS4405P - Single P-Channel 1.8V Specified MicroSURF™

General Description

Taiwan Semiconductor’s new low cost,

state of the art MicroSURF™ lateral

MOSFET process technology in chipscale

bondwireless packaging minimizes PCB

space and RDS(ON) plus provides an ultra-

low Qg X RDS(ON) figure of merit.

MicroSURF™ for Load Switching

and PA Switch

Features

• -4.9A, -12V RDS(ON) = 50mΩ at -4.5 Volts

• -4.4A, -12V RDS(ON) = 70mΩ at -2.5 Volts

• -4.0A, -12V RDS(ON) = 90mΩ at -1.8 Volts

Patent Pending

• Low profile package: less than 0.8mm height

when mounted on PCB.

• Occupies only 1.21 mm²of PCB area.

Less than 30% of the area of a SC-70.

• Excellent thermal characteristics.

• Lead free solder bumps available.

Bump Side View

Absolute Maximum Ratings

TA=25°C unless otherwise noted

Symbol Parameter

Ratings

Units

VDSS

VGSS

Drain-Source Voltage

Gate-Source Voltage

-12

Drain Current

– Continuous

-4.9

– Pulsed

-10

Power Dissipation (Steady State)

1.5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

ºC

Thermal Characteristics

RθJA

R^θJR

R^θJC

Thermal Resistance, Junction-to-Ambient

°C/W

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

1.8

6/8/03 Rev0

12 3

中文翻译

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