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TS4162 PDF预览

TS4162

更新时间: 2024-02-24 02:18:01
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其他 - ETC 晶体晶体管
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5页 49K
描述
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-416

TS4162 数据手册

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Ordering number:ENN5436A  
NPN Epitaxial Planar Silicon Transistor  
TS4162  
VHF Band Low-Noise Amplifier  
and OSC Applications  
Features  
Package Dimensions  
unit:mm  
· Low noise : NF=1.8dB typ (f=150MHz).  
· High gain : S21e 2=16dB typ (f=150MHz).  
· Ultrasmall package facilitates miniaturization in end  
products  
2106A  
[TS4162]  
0.75  
0.6  
0.3  
3
0 to 0.1  
1
2
0.2  
0.1  
0.5 0.5  
1.6  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : SMCP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Collector-to-Base Voltage  
V
20  
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
12  
V
CEO  
V
2
50  
V
EBO  
I
mA  
mW  
˚C  
˚C  
C
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
C
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
I
V
V
V
V
V
V
V
V
V
=10V, I =0  
E
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CE  
CB  
CB  
CE  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
=1V, I =0  
10  
EBO  
C
h
h
1
=2V, I =3mA  
C
=2V, I =50mA  
C
=2V, I =3mA  
C
=10V, f=1MHz  
80  
200  
FE  
FE  
2
70  
f
Gain-Bandwidth Product  
Output Capacitance  
1.0  
1.7  
GHz  
pF  
T
Cob  
1.1  
0.8  
16  
1.8  
3.0  
Reverse Transfer Capacitance  
Forward Transfer Gain  
Noise Figure  
Cre  
=10V, f=1MHz  
pF  
| S21e |2  
NF  
13  
dB  
=2V, I =3mA, f=150MHz  
C
=2V, I =3mA, f=150MHz  
C
1.8  
dB  
Marking : MA  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
92500TS (KOTO) TA-2789 No.5436–1/5  

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