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TS4148CRZG PDF预览

TS4148CRZG

更新时间: 2024-11-24 08:36:11
品牌 Logo 应用领域
TSC 二极管开关光电二极管
页数 文件大小 规格书
2页 126K
描述
200mW High Speed SMD Switching Diode

TS4148CRZG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANTReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.58其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-R2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.8 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:WRAP AROUND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

TS4148CRZG 数据手册

 浏览型号TS4148CRZG的Datasheet PDF文件第2页 
TS4148C RZG  
200mW High Speed SMD Switching Diode  
Small Signal Diode  
0603  
A
B
Features  
—Designed for mounting on small surface.  
—Extremely thin/leadless package  
—High mounting capability,strong surage with stand,  
high reliability.  
C
D
—Pb free version and RoHS compliant  
—Halogen Free  
Mechanical Data  
Unit (mm)  
Unit (inch)  
Min Max  
—Case :0603 standard package,molded plastic  
Dimensions  
Min  
1.45  
0.70  
0.25  
0.55  
Max  
—Terminal: Gold plated,solderable  
per MIL-STD-750, Method 2026 guaranteed  
A
B
C
D
1.65 0.057 0.065  
0.90 0.028 0.035  
0.45 0.010 0.018  
0.75 0.022 0.030  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity:Indicated by cathode band  
—Weight : 0.004gram (approximately)  
Ordering Information  
Part No.  
Packing  
Package  
0603  
TS4148C RZG  
5K / 7" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
Units  
mW  
V
Power Dissipation  
PD  
VRRM  
IFRM  
IO  
200  
75  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
200  
100  
mA  
mA  
Non-Repetitive Peak Forward Surge Current  
at t<1s and Tj=25oC  
at t8.3ms and Tj=25oC  
Thermal Resistance (Junction to Ambient)  
0.4  
0.1  
IFSM  
A
RθJA  
375  
°C/W  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Electrical Characteristics  
Type Number  
Symbol  
V(BR)  
Min  
Max  
Units  
Reverse Breakdown Voltage  
I =  
-
-
-
-
-
-
-
75  
1.00  
1.25  
0.025  
5.0  
V
V
V
100μA  
10mA  
100mA  
20V  
R
I =  
F
Forward Voltage  
VF  
I =  
F
V =  
R
Reverse Leakage Current  
IR  
μA  
V =  
R
75V  
VR=0V,  
f=1.0MHz  
CJ  
4
pF  
ns  
Junction Capacitance  
Reverse Recovery Time IF=IR=10mA, RL=100Ω  
Trr  
4.0  
Version : A11  

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