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TS3USB30EDGSR PDF预览

TS3USB30EDGSR

更新时间: 2024-11-25 12:27:39
品牌 Logo 应用领域
德州仪器 - TI 解复用器开关
页数 文件大小 规格书
20页 1194K
描述
ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE

TS3USB30EDGSR 数据手册

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TS3USB30E  
www.ti.com  
SCDS255E DECEMBER 2008REVISED AUGUST 2012  
ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps)  
1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE  
Check for Samples: TS3USB30E  
1
FEATURES  
RSW PACKAGE  
(TOP VIEW)  
VCC Operation at 3 V to 4.3 V  
1.8-V Compatible Control-Pin Inputs  
IOFF Supports Partial Power-Down-Mode  
Operation  
7
6
8
9
5
4
3
D–  
OE  
D+/D– Pins Tolerate up to 5.25V  
rON = 10 Max  
V
GND  
D+  
CC  
ΔrON = 0.35 Typ  
10  
S
Cio(ON) = 7.5 pF Typ  
1
2
Low Power Consumption (1 μA Max)  
–3 dB Bandwidth = 900 MHz Typ  
Latch-Up Performance Exceeds  
(1)  
100 mA Per JESD 78, Class II  
RSW PACKAGE  
(BOTTOM VIEW)  
ESD Performance Tested Per JESD 22  
8000-V Human-Body Model (A114-B,  
Class II)  
1
2
1000-V Charged-Device Model (C101)  
10  
9
3
D+  
S
(2)  
ESD Performance I/O Port to GND  
15000-V Human-Body Model  
Packaged in 10-pin TQFN (1.4 mm × 1.8 mm)  
V
4
5
GND  
D–  
CC  
8
OE  
7
6
APPLICATIONS  
Routes Signals for USB 1.0, 1.1, and 2.0  
DGS PACKAGE  
(TOP VIEW)  
(1) Except OE and S inputs  
(2) High-voltage HBM is performed in addition to the standard  
HBM testing (A114-B, Class II) and applies to I/O ports tested  
with respect to GND only.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2008–2012, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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