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TS3USB221EDRCR PDF预览

TS3USB221EDRCR

更新时间： 2024-02-25 00:13:34
品牌 Logo 应用领域
德州仪器 - TI 解复用器开关复用器或开关信号电路光电二极管输出元件
页数 文件大小 规格书
20页 1061K
描述
HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE AND IEC LEVEL 3 ESD PROTECTION

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中文翻译

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TS3USB221EDRCR 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：QFN
包装说明：UQFN-10针数：10
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：12 weeks
风险等级：1.69Samacsys Confidence：4
Samacsys Status：ReleasedSamacsys PartID：418140
Samacsys Pin Count：10Samacsys Part Category：Integrated Circuit
Samacsys Package Category：OtherSamacsys Footprint Name：RSE (R-PUQFN-N10)FFW
Samacsys Released Date：2018-03-13 16:41:59Is Samacsys：N
模拟集成电路 - 其他类型：DIFFERENTIAL MULTIPLEXER标称带宽：1000 MHz
最大输入电压：5.5 V最小输入电压：
JESD-30 代码：R-PQCC-N10JESD-609代码：e4
长度：2 mm湿度敏感等级：1
正常位置：NO信道数量：2
功能数量：1端子数量：10
标称断态隔离度：40 dB通态电阻匹配规范：0.2 Ω
最大通态电阻 (Ron)：6 Ω最高工作温度：85 °C
最低工作温度：-40 °C输出：SEPARATE OUTPUT
封装主体材料：PLASTIC/EPOXY封装代码：VQCCN
封装形状：RECTANGULAR封装形式：CHIP CARRIER, VERY THIN PROFILE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：0.6 mm最大供电电流 (Isup)：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
最长断开时间：12 ns最长接通时间：30 ns
切换：BREAK-BEFORE-MAKE温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：1.5 mm
Base Number Matches：1

TS3USB221EDRCR 数据手册

 浏览型号TS3USB221EDRCR的Datasheet PDF文件第2页浏览型号TS3USB221EDRCR的Datasheet PDF文件第3页浏览型号TS3USB221EDRCR的Datasheet PDF文件第4页浏览型号TS3USB221EDRCR的Datasheet PDF文件第5页浏览型号TS3USB221EDRCR的Datasheet PDF文件第6页浏览型号TS3USB221EDRCR的Datasheet PDF文件第7页 
TS3USB221E  
www.ti.com ......................................................................................................................................................................................... SCDS263–SEPTEMBER 2009  
HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH  
WITH SINGLE ENABLE AND IEC LEVEL 3 ESD PROTECTION  
1
FEATURES  
DRC PACKAGE  
(TOP VIEW)  
•
•
•
•
•
•
•
•
•
VCC Operation of 2.5 V to 3.3 V  
Switch I/Os Accept Signals Up to 5.5 V  
1.8-V Compatible Control-Pin Inputs  
Low-Power Mode When OE Is Disabled (1 µA)  
rON = 6 Ω Maximum  
V
S
1
2
3
4
5
10  
9
1D+  
1D–  
2D+  
2D–  
GND  
CC  
8
D+  
D–  
OE  
rON = 0.2 Ω Typical  
Cio(on) = 7 pF Maximum  
7
Low Power Consumption (30 µA Maximum)  
ESD Performance Tested Per JESD 22  
6
–
7000-V Human-Body Model  
(A114-B, Class II)  
RSE PACKAGE  
(TOP VIEW)  
–
1000-V Charged-Device Model (C101)  
•
•
ESD Performance I/O Port to GND  
V
CC  
–
–
12-kV Human Body Model (A114-B, Class II)  
±7-kV Contact Discharge (IEC 61000-4-2)  
10  
1
2
3
4
9
8
7
6
1D+  
S
High Bandwidth (1 GHz Typical)  
1D–  
2D+  
2D–  
D+  
D–  
OE  
APPLICATIONS  
•
Routes Signals for USB 1.0, 1.1, and 2.0  
DESCRIPTION/  
ORDERING INFORMATION  
5
The TS3USB221E is  
a
high-bandwidth switch  
GND  
specially designed for the switching of high-speed  
USB 2.0 signals in handset and consumer  
applications, such as cell phones, digital cameras,  
and notebooks with hubs or controllers with limited  
USB I/Os. The wide bandwidth (1 GHz) of this switch  
allows signals to pass with minimum edge and phase  
distortion. The device multiplexes differential outputs  
from a USB host device to one of two corresponding  
outputs. The switch is bidirectional and offers little or  
no attenuation of the high-speed signals at the  
outputs. It is designed for low bit-to-bit skew and high  
channel-to-channel noise isolation, and is compatible  
with various standards, such as high-speed USB 2.0  
(480 Mbps).  
RSE PACKAGE  
(BOTTOM VIEW)  
V
CC  
10  
9
1
2
3
4
S
1D+  
1D–  
2D+  
2D–  
8
7
6
D+  
D–  
OE  
5
The TS3USB221E integrates ESD protection cells on  
all pins, is available in a SON package (3 mm ×  
3 mm) as well as in a tiny µQFN package (2 mm ×  
1.5 mm) and is characterized over the free air  
temperature range from –40°C to 85°C.  
GND  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
UNLESS OTHERWISE NOTED this document contains  
Copyright © 2009, Texas Instruments Incorporated  
PRODUCTION DATA information current as of publication date.  
Products conform to specifications per the terms of Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...20

中文翻译

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TS3USB221EDRCR 替代型号

型号 品牌 替代类型 描述 数据表
110238-0479 ITT

功能相似

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030-2409-003 ITT

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