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TS3DS26227YZPR

更新时间： 2024-01-18 02:01:53
品牌 Logo 应用领域
德州仪器 - TI 复用器开关复用器或开关信号电路光电二极管输入元件
页数 文件大小 规格书
19页 523K
描述
HIGH-BANDWIDTH DUAL SPDT DIFFERENTIAL SIGNAL SWITCH WITH INPUT LOGIC TRANSLATION

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TS3DS26227YZPR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：BGA
包装说明：VFBGA, BGA12,3X4,20针数：12
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：1.75Is Samacsys：N
其他特性：ALSO REQUIRES AN SUPPLY OF 1.65V TO 1.95V模拟集成电路 - 其他类型：SPDT
标称带宽：800 MHz最大输入电压：4.6 V
最小输入电压：JESD-30 代码：R-XBGA-B12
JESD-609代码：e1长度：1.87 mm
湿度敏感等级：1信道数量：1
功能数量：2端子数量：12
标称断态隔离度：40 dB通态电阻匹配规范：0.05 Ω
最大通态电阻 (Ron)：5.5 Ω最高工作温度：85 °C
最低工作温度：-40 °C输出：COMMON OUTPUT
封装主体材料：UNSPECIFIED封装代码：VFBGA
封装等效代码：BGA12,3X4,20封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH峰值回流温度（摄氏度）：260
电源：2.5/3.3 V认证状态：Not Qualified
座面最大高度：0.625 mm子类别：Multiplexer or Switches
最大供电电流 (Isup)：0.0005 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES最长断开时间：5.5 ns
最长接通时间：13 ns切换：BREAK-BEFORE-MAKE
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：BALL端子节距：0.5 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：1.37 mmBase Number Matches：1

TS3DS26227YZPR 数据手册

 浏览型号TS3DS26227YZPR的Datasheet PDF文件第2页浏览型号TS3DS26227YZPR的Datasheet PDF文件第3页浏览型号TS3DS26227YZPR的Datasheet PDF文件第4页浏览型号TS3DS26227YZPR的Datasheet PDF文件第5页浏览型号TS3DS26227YZPR的Datasheet PDF文件第6页浏览型号TS3DS26227YZPR的Datasheet PDF文件第7页 
TS3DS26227  
www.ti.com ................................................................................................................................................ SCDS224A–JUNE 2008–REVISED SEPTEMBER 2008  
HIGH-BANDWIDTH DUAL SPDT DIFFERENTIAL SIGNAL SWITCH  
WITH INPUT LOGIC TRANSLATION  
1
FEATURES  
APPLICATIONS  
•
•
•
•
•
Cell Phones  
PDAs  
Portable Instrumentation  
Low-Voltage Differential Signal Routing  
Mobile Industry Processor Interface (MIPI)  
Signal Routing  
2
•
High-Bandwidth Data Paths – Up to 800 MHz  
Specified Break-Before-Make Switching  
Control Inputs Reference to VIO  
•
•
•
•
•
•
•
•
Low Charge Injection  
Excellent ON-State Resistance Matching  
Low Total Harmonic Distortion (THD)  
2.3-V to 3.6-V Power Supply (V+)  
1.65-V to 1.95-V Logic Supply (VIO)  
YZP PACKAGE  
(BOTTOM VIEW)  
A
B
C
D
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
3
2
1
4
5
6
9
8
7
10  
11  
12  
1
2
3
•
ESD Performance Tested Per JESD 22  
–
4000-V Human-Body Model  
(A114-B, Class II)  
–
–
1000-V Charged-Device Model (C101)  
200-V Machine Model (A115-A)  
TERMINAL ASSIGNMENTS  
A
B
C
D
1
2
3
IN1  
VIO  
IN2  
NO1  
GND  
NO2  
COM1  
GND  
NC1  
V+  
COM2  
NC2  
DESCRIPTION/ORDERING INFORMATION  
The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from  
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal  
distortion during the transferring of a signal from one path to another. The device has excellent total harmonic  
distortion (THD) performance and consumes very low power. These features make this device suitable for  
portable applications.  
The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the  
control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.  
ORDERING INFORMATION  
TA  
PACKAGE(1)(2)  
NanoFree™ – WCSP (DSBGA)  
0.23-mm Large Bump – YZP (Pb-free)  
ORDERABLE PART NUMBER TOP-SIDE MARKING(3)  
–40°C to 85°C  
Tape and reel  
TS3DS26227YZPR  
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(3) YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following  
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NanoFree is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008, Texas Instruments Incorporated  
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