是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | TSSOP-8 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.43 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.00015 µA |
标称共模抑制比: | 80 dB | 频率补偿: | YES |
最大输入失调电压: | 12000 µV | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e0 | 长度: | 4.4 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | NO | 负供电电压上限: | |
标称负供电电压 (Vsup): | 功能数量: | 2 | |
端子数量: | 8 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | TSSOP | 封装等效代码: | TSSOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
峰值回流温度(摄氏度): | NOT SPECIFIED | 功率: | NO |
电源: | 10 V | 可编程功率: | NO |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
标称压摆率: | 5.5 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 3.2 mA | 供电电压上限: | 18 V |
标称供电电压 (Vsup): | 10 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 3500 kHz |
最小电压增益: | 7000 | 宽带: | NO |
宽度: | 3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TS272CPT | ETC |
获取价格 |
OP-AMP|DUAL|CMOS|TSSOP|8PIN|PLASTIC | |
TS272CPT | STMICROELECTRONICS |
获取价格 |
微功耗、超宽范围输入偏置电压 | |
TS272I | STMICROELECTRONICS |
获取价格 |
HIGH PERFORMANCE CMOS DUAL OPERATIONAL AMPLIFIERS | |
TS272IAD | STMICROELECTRONICS |
获取价格 |
HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS | |
TS272IAI | STMICROELECTRONICS |
获取价格 |
HIGH PERFORMANCE CMOS DUAL OPERATIONAL AMPLIFIERS | |
TS272IAN | STMICROELECTRONICS |
获取价格 |
HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS | |
TS272IAP | STMICROELECTRONICS |
获取价格 |
HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS | |
TS272IBD | STMICROELECTRONICS |
获取价格 |
HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS | |
TS272IBI | STMICROELECTRONICS |
获取价格 |
HIGH PERFORMANCE CMOS DUAL OPERATIONAL AMPLIFIERS | |
TS272IBN | STMICROELECTRONICS |
获取价格 |
HIGH SPEED CMOS DUAL OPERATIONAL AMPLIFIERS |