2SA1318

更新时间： 2024-01-03 11:17:54

品牌	Logo	应用领域
TRSYS		晶体晶体管放大器
页数	文件大小	规格书
1页	64K
描述
Plastic-Encapsulated Transistors

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技术参数
数据手册

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2SA1318 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.71	Is Samacsys：	N
Base Number Matches：	1

2SA1318 数据手册

Transys

Electronics

I M I T E D

TO-92 Plastic-Encapsulated Transistors

2SA1318 TRANSISTOR (PNP)

TO-92

FEATURES

Power dissipation

1. EMITTER

2. COLLECTOR

3. BASE

P_CM

: 0.5

W (Tamb=25℃)

Collector current

I_CM

: -0.2

Collector-base voltage

V_(BR)CBO: -60

1 2 3

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-1mA, I_B=0

MIN

-60

-50

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

µA

V_CB=-40V, I_E=0

-0.1

560

I_EBO

Emitter cut-off current

V_EB=-5V, I_C=0

h_FE(1)

V_CE=-6V, I_C=-1mA

100

DC current gain

h_FE(2)

V_CE=-6V, I_C=-0.1mA

V_CE(sat)

V_BE(sat)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-100mA, I_B=-10mA

V_CE=-6V, I_C=-10mA

-0.3

-1

MHz

200

4.5

C_ob

Collector output capacitance

V_CB=-6V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

100-200

140-280

200-400

280-560

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