Datasheet > TRS2E65F

TRS2E65F

更新时间： 2024-11-19 14:57:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	250K
描述
650 V/2 A SiC Schottky Barrier Diode, TO-220-2L

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TRS2E65F 技术参数

TRS2E65F

SiC Schottky Barrier Diode

TRS2E65F

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 2nd generation.

(2) High surge current capability : IFSM = 21A (Max)

(3) The junction capacitance is small : Cj = 8.7pF (Typ.)

(4) The reverse current is small. : IR = 0.2 µA (Typ.)

3. Packaging and Internal Circuit

1: Cathode

2: Anode

TO-220-2L

Start of commercial production

2017-06

2017-09-22

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
TRS2E65H	TOSHIBA	获取价格	650 V/2 A SiC Schottky Barrier Diode, TO-220-2L
TRS2-ED10638A/2	MINI	获取价格	RF Transformer, 0.07MHz Min, 450MHz Max
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TRS2J	BL Galaxy Electrical	获取价格	2A,600V,250ns, Surface Mount Fast Recovery Rectifiers
TRS2JA	BL Galaxy Electrical	获取价格	2A,600V,250ns, Surface Mount Fast Recovery Rectifiers
TRS2K	BL Galaxy Electrical	获取价格	2A,800V,500ns, Surface Mount Fast Recovery Rectifiers
TRS2KA	BL Galaxy Electrical	获取价格	2A,800V,500ns, Surface Mount Fast Recovery Rectifiers
TRS2M	BL Galaxy Electrical	获取价格	2A,1000V,500ns, Surface Mount Fast Recovery Rectifiers
TRS2MA	BL Galaxy Electrical	获取价格	2A,1000V,500ns, Surface Mount Fast Recovery Rectifiers