Datasheet > TRS24N65FB

TRS24N65FB

更新时间： 2024-11-19 14:56:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	264K
描述
650 V/24 A SiC Schottky Barrier Diode, TO-247

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TRS24N65FB 数据手册

TRS24N65FB

SiC Schottky Barrier Diode

TRS24N65FB

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 2nd generation

(2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A

(3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ.)

(4) Low reverse current: IR (Per Leg) = 0.6 µA (typ.)

3. Packaging and Internal Circuit

1: Anode

2: Cathode (heatsink)

3: Anode

TO-247

Start of commercial production

2020-07

2020-07-03

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6

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