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TRS20J120C PDF预览

TRS20J120C

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 168K
描述
EOL announced

TRS20J120C 数据手册

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TRS20J120C  
SiC Schottky Barrier Diode  
TRS20J120C  
1. Applications  
Power Factor Correction  
Secondary Rectification in Switching Regulators  
2. Features  
(1) Forward DC current: IF(DC) = 20 A  
(2) Repetitive peak reverse voltage: VRRM = 1200 V  
3. Packaging and Internal Circuit  
1: Anode  
2: Cathode (Heatsink)  
3: Anode  
TO-3P(N)  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Repetitive peak reverse voltage  
Symbol  
Note  
Rating  
Unit  
VRRM  
IF(DC)  
IFP  
1200  
20  
V
A
Forward DC current  
Forward pulse current  
I2t limit value  
(Note 1)  
(Note 2)  
310  
I2t  
112.5  
175  
A2s  
Junction temperature  
Storage temperature  
Mounting torque  
Tj  
Tstg  
TOR  
-55 to 175  
0.8  
Nm  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: t = 100 µs  
Note 2: f = 50 Hz  
Start of commercial production  
2014-07  
2014-09-03  
Rev.2.0  
1

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