Datasheet > TRS12E65H

TRS12E65H

更新时间： 2024-09-27 14:58:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	470K
描述
650 V/12 A SiC Schottky Barrier Diode, TO-220-2L

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TRS12E65H 数据手册

TRS12E65H

SiC Schottky Barrier Diode

TRS12E65H

1. Applications

•

Power Factor Correction

Solar Inverters

Uninterruptible Power Supplies

DC-DC Converters

2. Features

(1) Chip design of 3rd generation

(2) Low forward voltage : VF = 1.2 V (typ.)

(3) Low total capacitive charge: Qc = 33 nC (typ.)

(4) Low reverse current: IR = 2.4 µA (typ.)

3. Packaging and Internal Circuit

1: Cathode

2: Anode

TO-220-2L

Start of commercial production

2023-05

2023-04-11

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
TRS12N65FB	TOSHIBA	获取价格	650 V/12 A SiC Schottky Barrier Diode, TO-247
TRS12V65H	TOSHIBA	获取价格	650 V/12 A SiC Schottky Barrier Diode, DFN8×8
TRS1404	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 400MA I(C) \| TO-5
TRS1405	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 400MA I(C) \| TO-37VAR
TRS150-12	TTELEC	获取价格	Enclosed Power Supply 12V 150 Watt
TRS150-15	TTELEC	获取价格	Enclosed Power Supply 15V 150 Watt
TRS150-24	TTELEC	获取价格	Enclosed Power Supply 24V 150 Watt
TRS150-36	TTELEC	获取价格	Enclosed Power Supply 36V 147.6 Watt
TRS150-48	TTELEC	获取价格	Enclosed Power Supply 48V 148.8 Watt
TRS1604	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 400MA I(C) \| TO-5