Datasheet > TRF2050_00

TRF2050_00

更新时间： 2024-10-29 02:58:43

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
34页	534K
描述
LOW-VOLTAGE 1.2-GHz FRACTIONAL-N/INTEGER-N SYNTHESIZER

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TRF2050_00 数据手册

TRF2050

LOW-VOLTAGE 1.2-GHz FRACTIONAL-N/INTEGER-N SYNTHESIZER

SLWS030E– JUNE 1996 – REVISED OCTOBER 2000

1.2-GHz Operation

PW PACKAGE

(TOP VIEW)

Two Operating Modes:

– Philips SA7025 Emulation Mode

Pin-for-Pin and Programming

Compatible

CLOCK

DATA

STROBE

TSETUP

LOCK/TEST

– Extended Performance Mode (EPM)

Dual RF – IF Phase-Locked Loops

Fractional-N or Integer-N Operation

RFIN

DDA

PHP

PHI

SSA

PHA

CCP

Programmable EPM Fractional

Modulus of 1–16

REFIN

AUXIN

Normal, Speed-Up, and Fractional

Compensation Charge Pumps

Low-Power Consumption

description

The TRF2050 is a low-voltage, low-power consumption 1.2-GHz fractional-N/integer-N frequency synthesizer

component for wireless applications. Fractional-N division and an integral speed-up charge pump are used to

achieve rapid channel switching. Two operating modes are available: 1) SA7025 emulation mode in which the

part emulates the Philips SA7025 fractional-N synthesizer and 2) extended performance mode (EPM), which

provides additional features including fractional accumulator modulos from 1 to 16 (compared to only 5 or 8 for

the SA7025) and programmable control of the speed-up mode duration (compared to the SA7025 method of

holding the strobe line high).

Along with external loop filters, the TRF2050 provides all functions necessary for voltage-controlled oscillator

(VCO) control in a dual phase-locked loop (PLL) frequency synthesizer system. A main channel is provided for

radio frequency (RF) channels and an auxiliary channel for intermediate frequency (IF) channels. The

current-output charge pumps directly drive passive resistance-capacitance (RC) filter networks to generate

VCO control voltages. Rapid main-channel frequency switching is achieved with a charge pump arrangement

that increases the current drive and alters the loop-filter frequency response during the speed-up mode portion

of the switching interval.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...34

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与TRF2050_00相关器件

型号	品牌	获取价格	描述	数据表
TRF2050PW	TI	获取价格	LOW-VOLTAGE 1.2-GHz FRACTIONAL-N/INTEGER-N SYNTHESIZER
TRF2050PWLE	TI	获取价格	PLL FREQUENCY SYNTHESIZER, 1600MHz, PDSO20, PLASTIC, SO-20
TRF2050PWR	TI	获取价格	Low voltage 1.1 GHz Fractional-N/Integer-N Synthesizer 20-TSSOP
TRF2052	TI	获取价格	LOW-VOLTAGE 2-GHz SYNTHESIZER
TRF2052PW	TI	获取价格	LOW-VOLTAGE 2-GHz SYNTHESIZER
TRF2052PWR	TI	获取价格	暂无描述
TRF2056	TI	获取价格	LOW-VOLTAGE 1,2-GHz FRACTIONAL-N/INTEGER-N SYNTHESIZER
TRF2056PW	TI	获取价格	Low-Voltage 1.2-GHz Fractional-N/Integer-N Synthesizer 20-TSSOP 0 to 70
TRF2056PWR	TI	获取价格	Low-Voltage 1.2-GHz Fractional-N/Integer-N Synthesizer 20-TSSOP 0 to 70
TRF20-687-M003AW	RCD	获取价格	Tantalum Capacitor, Polarized, Tantalum (wet), 3V, 20% +Tol, 20% -Tol, 680uF, Through Hole

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