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TRF2020PW PDF预览

TRF2020PW

更新时间： 2024-01-02 04:37:16
品牌 Logo 应用领域
德州仪器 - TI 信号电路锁相环或频率合成电路光电二极管移动电话GSM蜂窝通信
页数 文件大小 规格书
26页 399K
描述
SYNTHESIZER FOR GLOBAL SYSTEM FOR MOBILE GSM CELLULAR TELEPHONES

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TRF2020PW 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：ObsoleteReach Compliance Code：not_compliant
HTS代码：8542.39.00.01风险等级：5.92
Is Samacsys：N其他特性：SELECTABLE 32/33 OR 8/9 PRESCALER
模拟集成电路 - 其他类型：PLL FREQUENCY SYNTHESIZERJESD-30 代码：R-PDSO-G24
长度：7.8 mm功能数量：1
端子数量：24最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP24,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
子类别：PLL or Frequency Synthesis Circuits最大供电电流 (Isup)：13 mA
最大供电电压 (Vsup)：4.5 V最小供电电压 (Vsup)：2.75 V
标称供电电压 (Vsup)：3 V表面贴装：YES
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：4.4 mm
Base Number Matches：1

TRF2020PW 数据手册

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TRF2020  
SYNTHESIZER FOR GLOBAL SYSTEM  
FOR MOBILE (GSM) CELLULAR TELEPHONES  
SLWS020B – FEBRUARY 1995 – REVISED JANUARY 1998  
PW PACKAGE  
(TOP VIEW)  
Three Separate Loops: 1 UHF and 2 VHF  
Operation to 1.2-GHz for Main Synthesizer  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
Operation to 250 MHz for Auxiliary  
Synthesizers  
V
AUX1_IN  
DD  
2
CLOCK  
DATA  
STROBE  
LD  
V
DDP1  
3
PDA1  
SW1  
RPA  
Fast Lock-up Time  
4
High-Speed Serial Data Bus  
Low Power Consumption  
5
6
V
V
SS  
DDA  
7
REF_IN  
SWM  
PDM  
Ideal for Global Systems for Mobile  
Communications (GSM) Applications  
8
V
SSP  
9
PDA2  
SW2  
V
SSA  
10  
11  
12  
RPM  
description  
V
V
DDP2  
AUX2_IN  
DDPM  
The Texas Instruments (TI ) TRF2020 is an  
integrated high performance frequency synthe-  
sizer device. The TRF2020 consists of one main  
1.2-GHz synthesizer and two auxiliary 250-MHz  
RF_IN  
synthesizers. Each synthesizer has an independent dual-modulus prescaler and separate powerdown modes.  
These features provide maximum flexibility for the design of 900-MHz wireless systems.  
The main synthesizer consists of a 32/33-modulus prescaler with an 11-bit counter, a phase-frequency detector,  
and a charge pump. The phase-frequency detector is referenced to an internal reference frequency that is  
derived from an external TCXO signal. The phase-frequency detector is also provided with a dead-zone  
compensation circuit that reduces synthesizer phase noise during locked conditions.  
Each auxiliary synthesizer consists of an independent 8/9-modulus prescaler with an 11-bit counter, a  
phase-frequency detector, and a charge pump. Similar to the main synthesizer, each auxiliary synthesizer’s  
phase-frequency detector is referenced to an internal reference frequency that is derived from an external  
TCXO signal.  
The external TCXO signal is prescaled by an 11-bit counter and then distributed to three independent  
postscalers. Each postscaler provides a selectable, divide-by-1, -2, -4, or -8 function before the reference signal  
is distributed to the associated synthesizer phase detector. The reference frequency prescaler and independent  
postscalers are software programmable.  
To achieve minimum lock-up time, each synthesizer contains a speed-up mode charge pump capable of  
providing 2 mA output current and an analog switch that can change the loop-filter time constant. The duration  
of the speed-up mode operations can be independently controlled with software.  
Thestatesofthethreeinternallockdetectorsareprovidedonaprogrammable, combinationallogicoutput;each  
synthesizer can be selected independently or ANDed together.  
The device is programmed over a three-wire, synchronous, serial data bus (clock, data, strobe) with achievable  
bit rates as high as 20 Mbits/sec. The data is partitioned into words in such a manner that static parameters may  
be sent once during initialization, and dynamic parameters, such as frequency, may be sent as often as needed.  
The TRF2020 is offered in a 24-pin plastic thin-shrink small-outline package (TSSOP) and is characterized for  
free-air operation from –40°C to 85°C.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
TI is a trademark of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...26

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