TRF1020PFB

更新时间： 2024-02-23 19:31:24

品牌	Logo	应用领域
德州仪器 - TI		电信集成电路接收机 GSM
页数	文件大小	规格书
26页	451K
描述
GSM RECEIVER

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TRF1020PFB 数据手册

TRF1020

GSM RECEIVER

SLWS028B – MAY 1998 – REVISED SEPTEMBER 1998

Operates from 2.75 V to 3.5 V Supply

Low Current Consumption

Independent Powerdown of Low Noise

Amplifiers (LNA), Mixers, Intermediate

Frequency (IF) Amplifiers, and

Low Profile Package: 48-pin Plastic Quad

Flat Package (PQFP)

Voltage-Controlled Oscillator (VCO)

Digital Gain Control for LNA and IF

Amplifiers

Global System for Mobile Communications

(GSM), Class 3, 4, or 5 Mobile Station (MS)

Portable Cellular Telephone Applications

Two IF Amplifiers for Dual Conversion if

Required

Conversion from Radio Frequency (RF) to

I and Q Baseband on a Single Chip

Cascaded Operation of IF Amplifiers for

Single-Conversion Configurations

DC Compensation of I and Q Outputs

description

The TRF1020 is a single-chip radio frequency (RF) downconverter suitable for 900-MHz GSM applications. It

combines in one small package an LNA, an RF mixer, an IF mixer, two IF amplifiers, an I and Q mixer, and one

buffered VCO. The TRF1020 requires few external components.

The LNA has a nominal gain of 12.4 dB and noise figure of 2.1 dB. The first RF mixer has a conversion gain

of 13.4 dB and a single-sideband (SSB) noise figure of 8.3 dB. The IF amplifiers have combined variable gain

from 0 to 84 dB in approximately 3-dB steps. The IF amplifier frequency range is 40 to 180 MHz for the first IF

amplifier and 10 to 180 MHz for the second IF amplifier. The local oscillator of the I and Q mixer operates at four

times the last frequency of the IF mixer.

Power consumption is kept to a minimum and can be further reduced by dynamically placing selected functions

in standby power-down mode when not required. Power-down control is provided through the three-line digital

serial interface.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...26

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