PrRoedluecatsioend Process
TQRTLRCx
Advanced Passives Foundry Service
GaAs MESFET Foundry Service
Features
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Thick 4 Layer Metal; > 9 µm total
thickness
High Density Interconnects:
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3 Global
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1 Local
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High-Q Passives; Inductor Q >50
@ 2 GHz
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Low Cost: Passives Only
Thin Film Resistors
Dielectric Encapsulated Metals
Planarized Surface;
simplified plastic packaging
Volume Production Process
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TQRTRLCx Process Cross-Section
Applications
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Passive Components:
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Phase Shifters
Baluns
Transformers
Couplers
General Description
TriQuint’s TQRLC is a pure passives process. It is targeted at
high performance, small size passive-only circuits and utilizes
over 9 µm of gold metal. High density interconnections are ac-
complished with three thick global and one surface metal inter-
connect layers. The four metal layers are encapsulated in a high
performance, low dielectric constant material that allows wiring
flexibility and plastic packaging simplicity. Precision NiCr resis-
tors, inductors, and high value MIM capacitors are available.
The process is based on the TQTRx process, currently
TriQuint’s highest volume process. The TQRLC process is
available on 150-mm (6 inch) wafers.
Mixers (with off-chip di-
ode arrays)
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Circuits Requiring High-Q
Passive Elements
Matching Circuits
RF Module Front-End Filters
General RF and Microwave Imped-
ance Matching
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Semiconductors for Communications
Semiconductors for Communications
TriQuint Semiconductor
Phone: 503-615-9000
Phone: 503-615-9000
Fax: 503-615-8905
TriQuint Semiconductor
2300 NE Brookwood Pkwy
2300 NE Brookwood Pkwy
Hillsboro, Oregon 97124
www.triquint.com
www.triquint.com
Fax: 503-615-8905
Email: info@triquint.com
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Hillsboro, Oregon 97124
Email: info@triquint.com