Datasheet > TQBL500P06-5DL8

TQBL500P06-5DL8

更新时间： 2024-06-27 12:11:41

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	629K
描述
-60V, P Channel MOSFETs

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中文翻译

获取价格

数据手册

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TQBL500P06-5DL8 数据手册

P-Channel Enhancement Mode MOSFET

TQBL500P06-5DL8

Features



Advanced trench technology

Low R_DS(ON)

Low gate charge

HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN5×6-8L

Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

TQBL500P06-5DL8

5000 pcs / Tape & Reel

500P06

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

-60

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C )

-25

-17

I_D

-5.7

-4

I_DM

E_AS

P_D

-115

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

2.2

2.5

°C /W

MTM1587A: March 2024 [2.0]

www.gmesemi.com

12 3 4 5 6

中文翻译

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