Datasheet > TQBL080N04-3DL8

TQBL080N04-3DL8

更新时间： 2024-11-09 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	577K
描述
40V, N Channel MOSFETs

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中文翻译

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数据手册

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TQBL080N04-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

TQBL080N04-3DL8

Features



Advanced trench technology

Low on-resistance

Low gate charge

High-speed switching

Green device available

HBM: AEC-Q101-001: H1C (JESD22-A114-B: 1C)

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

TQBL080N04-3DL8

5000 pcs / Tape & Reel

080N04

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

212

I_DM

E_AS

P_D

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

3.3

3.5

°C /W

MTM1592A: March 2024 [2.0]

www.gmesemi.com

12 3 4 5 6

中文翻译

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