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TQBL075N04 PDF预览

TQBL075N04

更新时间: 2024-11-09 17:01:03
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 551K
描述
40V, N Channel MOSFETs

TQBL075N04 数据手册

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N-Channel Enhancement Mode MOSFET  
TQBL075N04  
Features  
Advanced trench technology  
Low on-resistance  
Low gate charge  
High-speed switching  
Green device available  
HBM: AEC-Q101-001: H1C (JESD22-A114-B: 1C)  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: TO-220AB  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
TO-220AB  
Ordering Information  
Part Number  
Package  
TO-220AB  
Shipping Quantity  
Marking Code  
TQBL075N04  
50 pcs / Tube  
075N04  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C)  
Continuous Drain Current (TC = 100°C)  
Pulsed Drain Current (tp = 10μs, TC = 25°C )  
Single Pulse Avalanche Energy *2  
Power Dissipation (TC = 25°C)  
85  
A
ID  
60  
A
IDM  
EAS  
PD  
300  
A
70  
mJ  
W
°C  
°C  
100  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +175  
-55 ~ +175  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air  
RθJC  
RθJA  
-
-
-
-
1.5  
50  
°C /W  
°C /W  
MTM1595A: March 2024 [2.0]  
www.gmesemi.com  
1

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