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TQ4H-L2-2M-3V PDF预览

TQ4H-L2-2M-3V

更新时间: 2024-11-07 22:19:15
品牌 Logo 应用领域
NAIS 继电器
页数 文件大小 规格书
7页 154K
描述
LOW PROFILE 2 FORM C RELAY

TQ4H-L2-2M-3V 数据手册

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TESTING  
LOW PROFILE  
2 FORM C RELAY  
TQ-RELAYS  
FEATURES  
9
• High sensitivity:  
.354  
26.7  
1.051  
+0.4  
5
2 Form C: 140 mW power consumption (single side stable type)  
4 Form C: 280 mW power consumption (single side stable type)  
–0.2  
+.016  
.197  
–.008  
9
14  
.354  
.551  
+0.4  
5
–0.2  
• Surge voltage withstand: 1500 V FCC Part 68  
• Sealed construction allows automatic washing  
• Self-clinching terminal also available  
• M.B.B. contact types available  
+.016  
.197  
–.008  
mm inch  
SPECIFICATIONS  
Contact  
Characteristics  
Standard  
(B.B.M) type  
Standard  
M.B.B.type  
(B.B.M) type  
M.B.B.type  
2 Form D  
Arrangement  
2 Form C  
4 Form C  
Initial insulation resistance*1  
Between open  
Min. 1,000 M(at 500 V DC)  
Initial contact resistance, max.  
(By voltage drop 6 V DC 1A)  
750 Vrms for 1 min. 300 Vrms for 1 min.  
50 mΩ  
(Detection current:  
10 mA)  
(Detection current:  
10 mA)  
contacts  
Contact material  
Gold-clad silver  
Initial  
breakdown Between contact  
1,000 Vrms for 1 min.  
(Detection current: 10 mA)  
Nominal switching capacity  
(resistive load)  
1 A 30 V DC  
0.5 A 125 V AC  
1 A 30 V  
DC  
voltage  
and coil  
Between contact  
sets  
1,000 Vrms for 1 min.  
(Detection current: 10 mA)  
Max. switching power  
(resistive load)  
30 W, 62.5 V A  
30 W  
Rating  
FCC surge voltage between open  
contacts  
Operate time [Set time]*3  
Max. switching voltage  
Max. switching current  
Min. switching capacity 1  
110 V DC, 125 V AC  
1 A  
110 V DC  
1,500 V  
Max. 3 ms (Approx. 2 ms)  
[Max. 3 ms (Approx. 2 ms)]  
10 µA 10 mV DC  
(at 20°C)  
140 mW  
(3 to 12 V DC)  
200 mW  
(24 V DC)  
300 mW  
Release time [Reset time]*4  
(at 20°C)  
M.B.B. time*8  
Temperature rise*2 (at 20°C)  
Max. 3 ms (Approx. 1 ms)  
[Max. 3 ms (Approx. 2 ms)]  
280 mW  
(3 to 24 V DC)  
400 mW  
Single side stable  
200 mW  
Min. 10 µs.  
(48 V DC)  
Max. 50°C  
(48 V DC)  
Functional*5  
Destructive*6  
Min. 490 m/s2 {50G}  
Min. 980 m/s2 {100G}  
176.4 m/s2 {18G}, 10 to 55 Hz  
at double amplitude of 3 mm  
294 m/s2 {30G}, 10 to 55 Hz  
at double amplitude of 5 mm  
Nominal  
operating  
power  
Shock resistance  
100 mW  
(3 to 12 V DC)  
150 mW  
1 coil latching  
200 mW  
400 mW  
Functional*7  
Vibration  
(24 V DC)  
resistance  
200 mW  
(3 to 12 V DC)  
300 mW  
Destructive  
2 coil latching  
Conditions for  
Ambient  
temperature  
–40°C to +70°C  
–40°F to +158°F  
–40°C to +50°C  
–40°F to +122°F  
(24 V DC)  
operation, trans-  
port and storage*9  
(Not freezing and  
condensing at low  
temperature)  
Mechanical (at 180 cpm)  
108  
107  
105  
Expected  
life (min.  
opera-  
1 A 30 V DC  
resistive  
Humidity  
5 to 85% R.H.  
Electrical  
2×105  
(at 20 cpm)  
(1 A 30V DC  
resistive)  
0.5 A 125 V AC  
resistive  
tions)  
105  
2 Form C:  
4 Form C:  
Approx. 1.5 g .053 oz  
Approx. 3 g .106 oz.  
Unit weight  
Note:  
1This value can change due to the switching frequency, environmental conditions,  
and desired reliability level, therefore it is recommended to check this with the ac-  
tual load.  
*8 M.B.B. time:  
Remarks  
Min. 10 µs  
* Specifications will vary with foreign standards certification ratings.  
*1 Measurement at same location as "Initial breakdown voltage" section.  
*2 By resistive method, nominal voltage applied to the coil; contact carrying current:  
1 A.  
Measuring  
condition  
*3 Nominal voltage applied to the coil, excluding contact bounce time.  
*4 Nominal voltage applied to the coil, excluding contact bounce time without diode.  
*5 Half-wave pulse of sine wave: 11 ms; detection time: 10 µs.  
*6 Half-wave pulse of sine wave: 6 ms.  
500 Ω  
5 V DC  
*7 Detection time: 10 µs.  
*9 Refer to 4. Conditions for operation, transport and storage mentioned in Cautions  
for use (Page 178).  
133  

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