Datasheet > TQ2-6V

TQ2-6V

更新时间： 2024-01-01 00:20:17

品牌	Logo	应用领域
NAIS		继电器光电二极管
页数	文件大小	规格书
7页	154K
描述
LOW PROFILE 2 FORM C RELAY

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技术参数
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TQ2-6V 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	ROHS COMPLIANT
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8536.49.00.50	风险等级：	1.76
Is Samacsys：	N	其他特性：	LOW PROFILE
主体宽度：	9 mm	主体高度：	5 mm
主体长度或直径：	14 mm	最大线圈电流（直流）：	0.023 A
线圈工作电压（直流）：	4.5 V	线圈功率：	140 mW
线圈释放电压（直流）：	0.6 V	线圈电阻：	257 Ω
最大线圈电压（直流）：	6 V	线圈/输入电源类型：	DC
触点（交流）最大额定R负载：	1A@125VAC	最大触点电流（交流）：	1 A
最大触点电流（直流）：	1 A	触点（直流）最大额定R负载：	1A@110VDC
最大触点电压（交流）：	125 V	最大触点电压（直流）：	110 V
触点/输出电源类型：	AC/DC	电气寿命：	200000 Cycle(s)
安装特点：	THROUGH HOLE-STRAIGHT MOUNT	工作时间：	3 ms
最高工作温度：	70 °C	最低工作温度：	-40 °C
包装方法：	BOX; TUBE	物理尺寸：	14mm x 9mm x 5mm
参考标准：	CSA; UL	继电器动作：	MOMENTARY
继电器功能：	DPDT	继电器类型：	POWER/SIGNAL RELAY
释放时间：	3 ms	表面贴装：	NO
端接类型：	SOLDER	Base Number Matches：	1

TQ2-6V 数据手册

TESTING

LOW PROFILE

2 FORM C RELAY

TQ-RELAYS

FEATURES

• High sensitivity:

.354

26.7

1.051

+0.4

2 Form C: 140 mW power consumption (single side stable type)

4 Form C: 280 mW power consumption (single side stable type)

–0.2

+.016

.197

–.008

.354

.551

+0.4

–0.2

• Surge voltage withstand: 1500 V FCC Part 68

• Sealed construction allows automatic washing

• Self-clinching terminal also available

• M.B.B. contact types available

+.016

.197

–.008

mm inch

SPECIFICATIONS

Contact

Characteristics

Standard

(B.B.M) type

Standard

M.B.B.type

(B.B.M) type

M.B.B.type

2 Form D

Arrangement

2 Form C

4 Form C

Initial insulation resistance*¹

Between open

Min. 1,000 MΩ (at 500 V DC)

Initial contact resistance, max.

(By voltage drop 6 V DC 1A)

750 Vrms for 1 min. 300 Vrms for 1 min.

50 mΩ

(Detection current:

10 mA)

(Detection current:

10 mA)

contacts

Contact material

Gold-clad silver

Initial

breakdown Between contact

1,000 Vrms for 1 min.

(Detection current: 10 mA)

Nominal switching capacity

(resistive load)

1 A 30 V DC

0.5 A 125 V AC

1 A 30 V

voltage

and coil

Between contact

sets

1,000 Vrms for 1 min.

(Detection current: 10 mA)

Max. switching power

(resistive load)

30 W, 62.5 V A

30 W

Rating

FCC surge voltage between open

contacts

Operate time [Set time]*³

Max. switching voltage

Max. switching current

Min. switching capacity ❇1

110 V DC, 125 V AC

1 A

110 V DC

1,500 V

Max. 3 ms (Approx. 2 ms)

[Max. 3 ms (Approx. 2 ms)]

10 µA 10 mV DC

(at 20°C)

140 mW

(3 to 12 V DC)

200 mW

(24 V DC)

300 mW

Release time [Reset time]*⁴

(at 20°C)

M.B.B. time*⁸

Temperature rise*²(at 20°C)

Max. 3 ms (Approx. 1 ms)

[Max. 3 ms (Approx. 2 ms)]

280 mW

(3 to 24 V DC)

400 mW

Single side stable

200 mW

—

Min. 10 µs.

(48 V DC)

Max. 50°C

(48 V DC)

Functional*⁵

Destructive*⁶

Min. 490 m/s²{50G}

Min. 980 m/s²{100G}

176.4 m/s²{18G}, 10 to 55 Hz

at double amplitude of 3 mm

294 m/s²{30G}, 10 to 55 Hz

at double amplitude of 5 mm

Nominal

operating

power

Shock resistance

100 mW

(3 to 12 V DC)

150 mW

1 coil latching

200 mW

400 mW

—

Functional*⁷

Vibration

(24 V DC)

resistance

200 mW

(3 to 12 V DC)

300 mW

Destructive

2 coil latching

Conditions for

Ambient

temperature

–40°C to +70°C

–40°F to +158°F

–40°C to +50°C

–40°F to +122°F

(24 V DC)

operation, trans-

port and storage*⁹

(Not freezing and

condensing at low

temperature)

Mechanical (at 180 cpm)

10⁸

10⁷

10⁵

Expected

life (min.

opera-

1 A 30 V DC

resistive

Humidity

5 to 85% R.H.

Electrical

2×10⁵

(at 20 cpm)

(1 A 30V DC

resistive)

0.5 A 125 V AC

resistive

tions)

10⁵

—

2 Form C:

4 Form C:

Approx. 1.5 g .053 oz

Approx. 3 g .106 oz.

Unit weight

—

Note:

❇1This value can change due to the switching frequency, environmental conditions,

and desired reliability level, therefore it is recommended to check this with the ac-

tual load.

*⁸M.B.B. time:

Remarks

Min. 10 µs

* Speciﬁcations will vary with foreign standards certiﬁcation ratings.

*¹Measurement at same location as "Initial breakdown voltage" section.

*²By resistive method, nominal voltage applied to the coil; contact carrying current:

1 A.

Measuring

condition

*³Nominal voltage applied to the coil, excluding contact bounce time.

*⁴Nominal voltage applied to the coil, excluding contact bounce time without diode.

*⁵Half-wave pulse of sine wave: 11 ms; detection time: 10 µs.

*⁶Half-wave pulse of sine wave: 6 ms.

500 Ω

5 V DC

*⁷Detection time: 10 µs.

*⁹Refer to 4. Conditions for operation, transport and storage mentioned in Cautions

for use (Page 178).

133

12 3 4 5 6 7

中文翻译

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