Datasheet > TPZT5551

TPZT5551

更新时间： 2024-11-19 17:01:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	368K
描述
160V,0.6A,General Purpose NPN Bipolar Transistor

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TPZT5551 数据手册

NPN Silicon Epitaxial Planar Transistor

TPZT5551

Features



Epitaxial planar die construction

Ideal for low power amplification and switching

Complementary PNP type available TPZT5401

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

TPZT5551

4000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

180

160

Unit

0.6

Thermal Characteristics

Parameter

Power Dissipation (Collector) ^*1

Thermal Resistance (Junction-to-Ambient)

Junction Temperature

Symbol

P_D

Value

1.15

Unit

C/W

°C

R_θJA

T_J

108

-55 ~ +150

Storage Temperature Range

T_STG

-55 ~ +150

°C

Note1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm²

STM0625A: December 2020

www.gmesemi.com

12 3 4

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