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TPY65R1K5MB PDF预览

TPY65R1K5MB

更新时间: 2024-11-03 17:00:55
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP 电子
页数 文件大小 规格书
12页 698K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件,无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

TPY65R1K5MB 数据手册

 浏览型号TPY65R1K5MB的Datasheet PDF文件第2页浏览型号TPY65R1K5MB的Datasheet PDF文件第3页浏览型号TPY65R1K5MB的Datasheet PDF文件第4页浏览型号TPY65R1K5MB的Datasheet PDF文件第5页浏览型号TPY65R1K5MB的Datasheet PDF文件第6页浏览型号TPY65R1K5MB的Datasheet PDF文件第7页 
TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB  
Wuxi Unigroup Microelectronics Co.,Ltd  
650V Super-junction Power MOSFET  
Description  
650V Super-junction Power MOSFET  
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ  
principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with  
highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by  
Wuxi Unigroup Microelectronics Company.  
Features  
Applications  
Very low FOM RDS(on)×Qg  
100% avalanche tested  
Easy to use/drive  
Switch Mode Power Supply (SMPS)  
Uninterruptible Power Supply (UPS)  
Power Factor Correction (PFC)  
Charger  
RoHS compliant  
Integrated ESD protection diode  
TO-220F  
TO-252  
TO-251  
SOT-223-2L  
Device Marking and Package Information  
Device  
Package  
TO-220F  
TO-252  
Marking  
TPA65R1K5M  
TPD65R1K5M  
TPU65R1K5M  
TPY65R1K5MB  
65R1K5M  
65R1K5M  
65R1K5M  
65R1K5M  
TO-251  
SOT-223-2L  
Key Performance Parameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
700  
1.5  
7
Unit  
V
Ω
Qg,typ  
nC  
A
ID  
3
ID,pulse  
9
A
ESD classHBM)  
EOSS @ 400V  
Body Diode diF/dt  
1C  
0.79  
500  
μJ  
A/μs  
V1.0  
www.tsinghuaicwx.com  
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