Datasheet > TPW60R075C

TPW60R075C

更新时间： 2024-11-03 17:00:59

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
8页	359K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

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TPW60R075C 数据手册

TPV60R075C, TPW60R075C

Wuxi Unigroup Microelectronics Company

600V Super-Junction Power MOSFET

FEATURES

 Very low FOM R_DS(on)×Q_g

 100% avalanche tested



RoHS compliant

APPLICATIONS

 Switch Mode Power Supply (SMPS)

 Uninterruptible Power Supply (UPS)

 Power Factor Correction (PFC)

Device Marking and Package Information

Device

Package

TO-3PN

TO-247

Marking

60R075C

TPV60R075C

TPW60R075C

Absolute Maximum Ratings T_C= 25ºC, unless otherwise noted

Parameter

Symbol

V_DSS

I_D

Value

600

Unit

Drain-Source Voltage (V_GS= 0V)

Continuous Drain Current

Pulsed Drain Current

(note1)

I_DM

141

Gate-Source Voltage

V_GSS

E_AS

±30

1120

Single Pulse Avalanche Energy

Avalanche Current

(note2)

(note1)

I_AR

Repetitive Avalanche Energy

Power Dissipation (T_C= 25ºC)

Operating Junction and Storage Temperature Range

E_AR

1.76

390

ºC

P_D

T_J, T_stg

-55~+150

Thermal Resistance

Parameter

Symbol

R_thJC

Value

0.32

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

K/W

R_thJA

V3.0

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