TPUH6D thru TPUH6J
Taiwan Semiconductor
CREAT BY ART
Surface Mount Ultrafast Rectifiers
FEATURES
- Very low profile, typical height of 1.1mm
- Excellent high temperature stability
- Glass passivated chip junction
- Controled avalanche characteristics
- Low leakage current
- High forward surge capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-277A (SMPC)
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high voltage, high frequency power factor
corrections, switching mode power supplies,
freewheeling diodes and secondary dc to dc rectifications
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound, UL flammability classification rating 94V-0
Packing code suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 95 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
TPUH6D
UH6D
200
TPUH6J
UH6J
SYMBOL
UNIT
Marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
VRRM
IF(AV)
600
V
A
6
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Test condition
TJ=25oC
TYP
MAX
-
TYP
MAX
-
0.80
0.65
0.87
0.73
1.98
1.23
2.45
1.59
IF=3A
Maximum instantaneous forward voltage (1)
TJ=125oC
TJ=25oC
VF
-
-
V
1.05
0.90
3.00
1.80
IF=6A
TJ=125oC
10
200
25
Maximum reverse current @ rated VR TJ=25°C
TJ=125°C
IR
μA
ns
IF=0.5A, IR=1A, IRR=0.25A
Maximum reverse
recovery time
trr
IF=1A, di/dt=-50A/μs, VR=30V
45
(2)
12
RθJM
Typical thermal resistance
°C/W
(3)
80
RθJA
Typical junction capacitance (4)
Operating junction temperature range
Storage temperature range
CJ
TJ
50
pF
°C
°C
- 55 to +175
- 55 to +175
TSTG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Mounted on FR4 PCB with 16mm x 16mm Cu pad area
Note 3: Free air, mounted on recommned pad
Note 4: Measured at 1 MHz and Applied VR=4.0 V
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Document Number: DS_D1411082
Version: B14