TPT5609
TO-92L Transistor (NPN)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
4.700
5.100
7.800
8.200
3
2
0.600
0.800
1
Features
Excellent linearity of Current Gain
Low saturation voltage
0.350
0.550
13.800
14.200
Complementary to TPT5610
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
1.270 TYP
25
2.440
2.640
20
V
0.000
0.300
1.600
5
V
0.350
0.450
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
1
A
3.700
4.100
1.280
1.580
PC
0.75
150
-55-150
W
℃
℃
4.000
TJ
Tstg
Storage Temperature
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
IC =10µA, IE=0
IC =1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=5V, IC=0
conditions
MIN
25
20
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
µA
µA
1
1
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=2V, IC=500mA
IC=800mA, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
60
240
0.5
1
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
Transition frequency
MHz
pF
fT
190
22
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
A
B
C
60-120
85-170
120-240
Range
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