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TPT5609 PDF预览

TPT5609

更新时间: 2023-12-06 20:11:28
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 785K
描述
双极型晶体管

TPT5609 数据手册

 浏览型号TPT5609的Datasheet PDF文件第2页 
TPT5609  
TO-92L Transistor (NPN)  
TO-92L  
1. EMITTER  
2. COLLECTOR  
3. BASE  
4.700  
5.100  
7.800  
8.200  
3
2
0.600  
0.800  
1
Features  
—
—
—
Excellent linearity of Current Gain  
Low saturation voltage  
0.350  
0.550  
13.800  
14.200  
Complementary to TPT5610  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector- Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
Units  
V
1.270 TYP  
25  
2.440  
2.640  
20  
V
0.000  
0.300  
1.600  
5
V
0.350  
0.450  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
1
A
3.700  
4.100  
1.280  
1.580  
PC  
0.75  
150  
-55-150  
W
4.000  
TJ  
Tstg  
Storage Temperature  
Dimensions in inches and (millimeters)  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
IC =10µA, IE=0  
IC =1mA, IB=0  
IE=10µA, IC=0  
VCB=20V, IE=0  
VEB=5V, IC=0  
conditions  
MIN  
25  
20  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
µA  
µA  
1
1
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
VCE=2V, IC=500mA  
IC=800mA, IB=80mA  
VCE=2V, IC=500mA  
VCE=2V, IC=500mA  
VCB=10V, IE=0, f=1MHz  
60  
240  
0.5  
1
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
V
V
Transition frequency  
MHz  
pF  
fT  
190  
22  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE  
Rank  
A
B
C
60-120  
85-170  
120-240  
Range  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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