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TPSMC11-HE3/9T PDF预览

TPSMC11-HE3/9T

更新时间： 2024-11-27 18:01:39
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
3页 29K
描述
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMC, 2 PIN

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TPSMC11-HE3/9T 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-214AB包装说明：R-PDSO-C2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.73其他特性：PATENTED DEVICE
最大击穿电压：12.1 V最小击穿电压：9.9 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL认证状态：Not Qualified
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

TPSMC11-HE3/9T 数据手册

 浏览型号TPSMC11-HE3/9T的Datasheet PDF文件第2页浏览型号TPSMC11-HE3/9T的Datasheet PDF文件第3页 
TPSMC6.8 thru TPSMC43A  
Vishay Semiconductors  
formerly General Semiconductor  
Automotive Surface Mount  
Transient Voltage Suppressors  
DO-214AB (SMC)  
Breakdown Voltage 6.8 to 43V  
Peak Pulse Power 1500W  
Cathode Band  
Mounting Pad Layout  
0.126 (3.20)  
0.114 (2.90)  
0.245 (6.22)  
0.220 (5.59)  
0.185 MAX.  
(4.69 MAX.)  
0.121 MIN.  
(3.07 MIN.)  
Dimensions in inches  
and (millimeters)  
0.280 (7.11)  
0.260 (6.60)  
0.060 MIN.  
(1.52 MIN.)  
0.012 (0.305)  
0.006 (0.152)  
0.320 REF  
0.103 (2.62)  
0.079 (2.06)  
*Patent #’s  
4,980,315  
5,166,769  
5,278,094  
Features  
• Designed for under the hood surface mount  
applications  
0.060 (1.52)  
0.030 (0.76)  
0.008  
(0.203)  
Max.  
0.320 (8.13)  
0.305 (7.75)  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• Easy pick and place  
Available in uni-directional only  
• Low profile package  
• Built-in strain relief  
Mechanical Data  
• Ideal for automated placement  
• Exclusive patented PAR® oxide passivated  
chip construction  
• 1500W peak pulse power capability with  
a 10/1000ms waveform, repetition rate  
(duty cycle): 0.01%  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
Case: JEDEC DO-214AB molded plastic body over  
passivated junction  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Polarity: The color band denotes the cathode,  
which is positive with respect to the anode under  
normal TVS operation  
Mounting Position: Any  
Weight: 0.007 oz., 0.2 g  
• For devices with V  
≥ 10V I are typically  
D
(BR)  
Packaging codes/options:  
less than 1.0mA at T = 150°C  
A
9/3.5K per 13" Reel (16mm tape), 30K/box  
7/850 EA per 7" Reel (16mm tape), 27K/box  
• High temperature soldering:  
250°C/10 seconds at terminals  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with a 10/1000µs  
PPPM  
Minimum 1500  
W
waveform(1)(2)(Fig. 3)  
Peak power pulse current with a 10/1000µs  
IPPM  
See Next Table  
A
waveform(1) (Fig. 1)  
Peak forward surge current 8.3ms single half sine-wave(2)(3)  
Maximum instantaneous forward voltage at 100A(3)  
Operating junction and storage temperature range  
IFSM  
VF  
200  
3.5  
A
V
TJ, TSTG  
–65 to +185  
°C  
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2  
(2) Mounted on 0.31 x 0.31” (8.0 x 8.0mm) copper pads to each terminal  
(3) Measured on 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
Document Number 88407  
06-May-02  
www.vishay.com  
1
123

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