Datasheet > TPSMC10HE3/57T

TPSMC10HE3/57T

更新时间： 2024-11-24 22:58:43

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	91K
描述
TVS DIODE 8.1V 15V DO214AB

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中文翻译

获取价格

数据手册
替代型号

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TPSMC10HE3/57T 数据手册

TPSMC6.8A thru TPSMC47A

www.vishay.com

Vishay General Semiconductor

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

Available

• Junction passivation optimized design

passivated anisotropic rectifier technology

• T_J= 185 °C capability suitable for high

reliability and automotive requirement

• Available in unidirectional polarity only

• 1500 W peak pulse power capability with a

10/1000 μs waveform

Available

SMC (DO-214AB)

Cathode

• Excellent clamping capability

• Very fast response time

Anode

• Low incremental surge resistance

LINKS TO ADDITIONAL RESOURCES

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

3D Models

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_BR

6.8 V to 47 V

V_WM

5.8 V to 40.2 V

1500 W

MECHANICAL DATA

P_PPM

Case: SMC (DO-214AB)

I_FSM

200 A

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

T_Jmax.

Polarity

Package

185 °C

Unidirectional

SMC (DO-214AB)

(“_X” denotes revision code e.g. A, B, ...)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 and HM3 suffix meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

1500

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) ⁽¹⁾⁽²⁾

Peak power pulse current with a 10/1000 μs waveform (fig. 1) ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave ⁽²⁾⁽³⁾

Maximum instantaneous forward voltage at 100 A ⁽²⁾⁽³⁾

Operating junction and storage temperature range

See table next page

200

I_FSM

V_F

3.5

T_J, T_STG

-65 to +185

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal

Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

(2)

(3)

Revision: 19-Apr-2021

Document Number: 88407

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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TPSMC10HE3/57T 替代型号

型号	品牌	替代类型	描述	数据表
TPSMC10HE3_A/H	VISHAY	类似代替	TVS DIODE 8.1V 15V DO214AB

与TPSMC10HE3/57T相关器件

型号	品牌	获取价格	描述	数据表
TPSMC10-HE3/7T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLAST
TPSMC10HE3/9AT	VISHAY	获取价格	TVS DIODE 8.1V 15V DO214AB
TPSMC10-HE3/9AT	VISHAY	获取价格	1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
TPSMC10-HE3/9T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLAST
TPSMC10HE3_A/H	VISHAY	获取价格	TVS DIODE 8.1V 15V DO214AB
TPSMC10HE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
TPSMC11	EIC	获取价格	AUTOMOTIVE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
TPSMC11	VISHAY	获取价格	AUTOMOTIVE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
TPSMC11/7	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 8.92V V(RWM), Unidirectional, 1 Element, Silicon, D
TPSMC110A-VR	LITTELFUSE	获取价格	TPSMC-VR系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压

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