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TPS40000DGSTR PDF预览

TPS40000DGSTR

更新时间: 2024-12-01 15:54:59
品牌 Logo 应用领域
德州仪器 - TI 开关光电二极管
页数 文件大小 规格书
28页 998K
描述
SWITCHING CONTROLLER, 345kHz SWITCHING FREQ-MAX, PDSO10, MSOP-10

TPS40000DGSTR 技术参数

生命周期:Obsolete零件包装代码:MSOP
包装说明:TSSOP,针数:10
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.74
模拟集成电路 - 其他类型:SWITCHING CONTROLLER控制模式:VOLTAGE-MODE
控制技术:PULSE WIDTH MODULATION最大输入电压:5.5 V
最小输入电压:2.25 V标称输入电压:5 V
JESD-30 代码:R-PDSO-G10长度:3 mm
功能数量:1端子数量:10
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:SQUARE封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
认证状态:Not Qualified座面最大高度:1.07 mm
表面贴装:YES切换器配置:PUSH-PULL
最大切换频率:345 kHz温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:3 mm
Base Number Matches:1

TPS40000DGSTR 数据手册

 浏览型号TPS40000DGSTR的Datasheet PDF文件第2页浏览型号TPS40000DGSTR的Datasheet PDF文件第3页浏览型号TPS40000DGSTR的Datasheet PDF文件第4页浏览型号TPS40000DGSTR的Datasheet PDF文件第5页浏览型号TPS40000DGSTR的Datasheet PDF文件第6页浏览型号TPS40000DGSTR的Datasheet PDF文件第7页 
SLUS507D − JANUARY 2002 − REVISED NOVEMBER 2005  
ꢑꢋ ꢊꢀꢒꢓ ꢔꢍꢕ ꢋ ꢖꢔ  
ꢛꢐꢘ ꢜ ꢘꢋ ꢏꢀ ꢚꢋ ꢊ ꢊꢔ ꢚ  
FEATURES  
APPLICATIONS  
D
D
D
D
D
D
D
D
Operating Input Voltage 2.25 V to 5.5 V  
Output Voltage as Low as 0.7 V  
1% Internal 0.7 V Reference  
D
D
D
D
D
D
Networking Equipment  
Telecom Equipment  
Base Stations  
Servers  
Predictive Gate Drivet N-Channel MOSFET  
Drivers for Higher Efficiency  
DSP Power  
Externally Adjustable Soft-Start and  
Overcurrent Limit  
Power Modules  
DESCRIPTION  
Source-Only Current or Source/Sink Current  
Versions for Starting Into V  
Pre-Bias  
OUT  
The TPS4000x are controllers for low-voltage,  
10-Lead MSOP PowerPadt Package for  
non-isolated synchronous buck regulators. These  
controllers drive an N-channel MOSFET for the  
primary buck switch, and an N-channel MOSFET  
for the synchronous rectifier switch, thereby  
achieving very high-efficiency power conversion. In  
addition, the device controls the delays from main  
switch off to rectifier turn-on and from rectifier  
turn-off to main switch turn-on in such a way as to  
minimize diode losses (both conduction and  
recovery) in the synchronous rectifier with TI’s  
proprietary Predictive Gate Drivet technology. The  
reduction in these losses is significant and increases  
efficiency. For a given converter power level, smaller  
FETs can be used, or heat sinking can be reduced  
or even eliminated.  
Higher Performance  
D
D
D
Thermal Shutdown  
Internal Boostrap Diode  
Fixed-Frequency, Voltage-Mode Control  
− TPS40000/1/4 300-kHz  
− TPS40002/3/5 600-kHz  
SIMPLIFIED APPLICATION DIAGRAM  
V
IN  
TPS40000  
1
2
3
4
ILIM  
BOOT 10  
FB  
HDRV  
9
COMP  
SS/SD  
V
OUT  
SW  
VDD  
8
7
6
5
GND  
LDRV  
UDG−01141  
PowerPADt and Predictive Gate Drivet are trademarks of Texas Instruments Incorporated.  
Copyright 2005, Texas Instruments Incorporated  
ꢤ ꢨ ꢥ ꢤꢝ ꢞꢲ ꢠꢟ ꢣ ꢫꢫ ꢩꢣ ꢡ ꢣ ꢢ ꢨ ꢤ ꢨ ꢡ ꢥ ꢭ  
1
www.ti.com  

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