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TPS2096DRG4 PDF预览

TPS2096DRG4

更新时间: 2024-11-20 15:54:59
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
26页 1087K
描述
IC 0.5 A 4 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO16, GREEN, PLASTIC, SOIC-16, Peripheral Driver

TPS2096DRG4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SSOP16,.25针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.12
内置保护:OVER CURRENT; THERMAL; UNDER VOLTAGE驱动器位数:4
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G16
长度:9.9 mm功能数量:4
端子数量:16最高工作温度:85 °C
最低工作温度:输出电流流向:SINK
最大输出电流:0.25 A标称输出峰值电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SSOP16,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:Peripheral Drivers
最大供电电压:5.5 V最小供电电压:2.7 V
标称供电电压:3.3 V表面贴装:YES
技术:MOS温度等级:OTHER
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:40000 µs接通时间:20000 µs
宽度:3.9 mmBase Number Matches:1

TPS2096DRG4 数据手册

 浏览型号TPS2096DRG4的Datasheet PDF文件第2页浏览型号TPS2096DRG4的Datasheet PDF文件第3页浏览型号TPS2096DRG4的Datasheet PDF文件第4页浏览型号TPS2096DRG4的Datasheet PDF文件第5页浏览型号TPS2096DRG4的Datasheet PDF文件第6页浏览型号TPS2096DRG4的Datasheet PDF文件第7页 
TPS2090, TPS2091, TPS2092 DUAL  
TPS2095, TPS2096, TPS2097 QUAD  
www.ti.com  
SLVS245CSEPTEMBER 2000REVISED OCTOBER 2007  
POWER-DISTRIBUTION SWITCHES  
1
FEATURES  
80-mHigh-Side MOSFET Switch  
250 mA Continuous Current per Channel  
Independent Thermal and Short-Circuit  
Protection With Overcurrent Logic Output  
Operating Range: 2.7-V to 5.5-V  
CMOS- and TTL-Compatible Enable Inputs  
2.5-ms Typical Rise Time  
Undervoltage Lockout  
10 μA Maximum Standby Supply Current  
Bidirectional Switch  
Available in 8-Pin and 16-Pin SOIC Packages  
Ambient Temperature Range, 0°C to 85°C  
ESD Protection  
DESCRIPTION  
The TPS2090, TPS2091, and TPS2092 dual and the  
TPS2095,  
TPS2096  
and  
TPS2097  
quad  
power-distribution switches are intended for  
applications where heavy capacitive loads and short  
circuits are likely to be encountered. The TPS209x  
devices incorporate 80-mN-channel MOSFET  
high-side power switches for power-distribution  
systems that require multiple power switches in a  
single package. Each switch is controlled by an  
independent logic enable input. Gate drive is provided  
by an internal charge pump designed to control the  
power-switch rise times and fall times to minimize  
current surges during switching. The charge pump  
requires no external components and allows  
operation from supplies as low as 2.7 V.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2000–2007, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

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