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TPS2082DR PDF预览

TPS2082DR

更新时间: 2024-09-21 12:02:35
品牌 Logo 应用领域
德州仪器 - TI 外围驱动器驱动程序和接口开关接口集成电路光电二极管
页数 文件大小 规格书
26页 1073K
描述
POWER-DISTRIBUTION SWITCHES

TPS2082DR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:5.15Is Samacsys:N
内置保护:TRANSIENT; OVER CURRENT; THERMAL; UNDER VOLTAGE驱动器位数:2
输入特性:STANDARD接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm湿度敏感等级:1
功能数量:2端子数量:8
最高工作温度:85 °C最低工作温度:
输出电流流向:SINK最大输出电流:0.5 A
标称输出峰值电流:1 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Peripheral Drivers最大压摆率:0.11 mA
最大供电电压:5.5 V最小供电电压:2.7 V
标称供电电压:3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL EXTENDED
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:40000 µs
接通时间:20000 µs宽度:3.9 mm
Base Number Matches:1

TPS2082DR 数据手册

 浏览型号TPS2082DR的Datasheet PDF文件第2页浏览型号TPS2082DR的Datasheet PDF文件第3页浏览型号TPS2082DR的Datasheet PDF文件第4页浏览型号TPS2082DR的Datasheet PDF文件第5页浏览型号TPS2082DR的Datasheet PDF文件第6页浏览型号TPS2082DR的Datasheet PDF文件第7页 
TPS2080, TPS2081, TPS2082 DUAL  
TPS2085, TPS2086, TPS2087 QUAD  
www.ti.com  
SLVS202BSEPTEMBER 2000REVISED OCTOBER 2007  
POWER-DISTRIBUTION SWITCHES  
1
FEATURES  
80-mHigh-Side MOSFET Switch  
500 mA Continuous Current per Channel  
Independent Thermal and Short-Circuit  
Protection With Overcurrent Logic Output  
Operating Range: 2.7-V to 5.5-V  
CMOS- and TTL-Compatible Enable Inputs  
2.5-ms Typical Rise Time  
Undervoltage Lockout  
10 μA Maximum Standby Supply Current  
Bidirectional Switch  
Available in 8-Pin and 16-Pin SOIC Packages  
Ambient Temperature Range, 0°C to 85°C  
ESD Protection  
DESCRIPTION  
The TPS2080, TPS2081, and TPS2082 dual and the  
TPS2085,  
TPS2086  
and  
TPS2087  
quad  
power-distribution switches are intended for  
applications where heavy capacitive loads and short  
circuits are likely to be encountered.  
The TPS208x devices incorporate 80-mN-channel MOSFET high-side power switches for power-distribution  
systems that require multiple power switches in a single package. Each switch is controlled by an independent  
logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise  
times and fall times to minimize current surges during switching. The charge pump requires no external  
components and allows operation from supplies as low as 2.7 V.  
When the output load exceeds the current-limit threshold or a short is present, the TPS208x limits the output  
current to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx) logic output low.  
When continuous heavy overloads and short circuits increase the power dissipation in the switch causing the  
junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a  
thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures the switch  
remains off until valid input voltage is present. The TPS208x devices are designed to current limit at 1.0-A load.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2000–2007, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

TPS2082DR 替代型号

型号 品牌 替代类型 描述 数据表
TPS2082DRG4 TI

完全替代

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TPS2082DG4 TI

完全替代

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TPS2082D TI

完全替代

POWER-DISTRIBUTION SWITCHES

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1A 4 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO16, GREEN, PLASTIC, SOIC-16