Datasheet > TPN4800CQH

TPN4800CQH

更新时间： 2024-11-10 15:18:51

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TPN4800CQH 数据手册

TPN4800CQH

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TPN4800CQH

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 3.3 nC (typ.)

(3) Small output charge: Qoss = 21 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)

(6) Enhancement mode: Vth = 3.3 to 4.3 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

Start of commercial production

2022-08

2022-09-28

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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