Datasheet > TPN2R503NC

TPN2R503NC

更新时间： 2024-11-06 14:56:15

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TPN2R503NC 数据手册

TPN2R503NC

MOSFETs Silicon N-channel MOS (U-MOS)

TPN2R503NC

1. Applications

•

Power Management Switches

2. Features

(1) Small footprint due to a small and thin package

(2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

Start of commercial production

2012-11

2016-05-13

Rev.5.0

12 3 4 5 6 7...9

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