Datasheet > TPN11003NL(TE12L)

TPN11003NL(TE12L)

更新时间： 2024-09-17 10:05:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	231K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),LLCC

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TPN11003NL(TE12L) 数据手册

TPN11003NL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPN11003NL

1. Applications

•

Switching Voltage Regulators

•

DC-DC Converters

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 2.0 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 12.6 mΩ (typ.) (VGS = 4.5 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

2013-04-05

Rev.2.0

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TPN11003NL(TE12L1)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),LLCC
TPN11006NL	TOSHIBA	获取价格	Power MOSFET - Nch 30V<VDSS≤60V
TPN11006NL(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,37A I(D),LLCC
TPN11006NL(TE12L1)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,37A I(D),LLCC
TPN11006PL	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance
TPN1110ENH	TOSHIBA	获取价格	N-ch MOSFET, 200 V, 0.114 Ω@10V, TSON Advance
TPN12008QM	TOSHIBA	获取价格	Power Field-Effect Transistor
TPN1200APL	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 0.0115 Ω@10V, TSON Advanc
TPN-125	COOPER	获取价格	Electric Fuse, 125A, 170VDC, 100000A (IR), Inline/holder
TPN13008NH	TOSHIBA	获取价格	N-ch MOSFET, 80 V, 0.0133 Ω@10V, TSON Advance