Datasheet > TPH9R00CQH

TPH9R00CQH

更新时间： 2024-11-21 14:58:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	649K
描述
N-ch MOSFET, 150 V, 0.009 Ω@10V, SOP Advance / SOP Advance(N), U-MOSⅩ-H

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TPH9R00CQH 数据手册

TPH9R00CQH

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TPH9R00CQH

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 11.7 nC (typ.)

(3) Small output charge: Qoss = 87 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 7.3 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)

(6) Enhancement mode: Vth = 3.3 to 4.3 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(N)

The package can be selected according to your preference. For details, please contact your TOSHIBA sales

representative.

Start of commercial production

2021-05

Toshiba Electronic Devices & Storage Corporation

2021-03-16

Rev.1.0

12 3 4 5 6 7...10

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