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TPH9R00CQ5 PDF预览

TPH9R00CQ5

更新时间: 2024-11-06 14:56:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 651K
描述
N-ch MOSFET, 150 V, 0.009 Ω@10V, Qrr=34nC@100A/μs, SOP Advance / SOP Advance(N), U-MOSⅩ-H

TPH9R00CQ5 数据手册

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TPH9R00CQ5  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPH9R00CQ5  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) Fast reverse recovery time : trr = 40 ns (typ.)  
(2) Small reverse recovery charge : Qrr = 34 nC (typ.)  
(3) Small gate charge: QSW = 11.7 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 7.3 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)  
(6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance(N)  
The package can be selected according to your preference. For details, please contact your TOSHIBA sales  
representative.  
Start of commercial production  
2022-09  
©2022-2023  
Toshiba Electronic Devices & Storage Corporation  
2023-04-12  
Rev.2.0  
1

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