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TPH8R808QM PDF预览

TPH8R808QM

更新时间: 2024-11-26 15:19:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 875K
描述
SiC MOSFETs

TPH8R808QM 数据手册

 浏览型号TPH8R808QM的Datasheet PDF文件第2页浏览型号TPH8R808QM的Datasheet PDF文件第3页浏览型号TPH8R808QM的Datasheet PDF文件第4页浏览型号TPH8R808QM的Datasheet PDF文件第5页浏览型号TPH8R808QM的Datasheet PDF文件第6页浏览型号TPH8R808QM的Datasheet PDF文件第7页 
TPH8R808QM  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPH8R808QM  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 8.6 nC (typ.)  
(3) Small output charge: Qoss = 31 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 6.8 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)  
(6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.3 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance(N)  
Start of commercial production  
2022-08  
©2021-2022  
2022-09-28  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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