Datasheet > TPH6R30ANL

TPH6R30ANL

更新时间： 2023-12-20 18:45:14

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	603K
描述
N-ch MOSFET, 100 V, 0.0063 Ω@10V, SOP Advance, U-MOSⅧ-H

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TPH6R30ANL 数据手册

TPH6R30ANL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPH6R30ANL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge : QSW = 14 nC (typ.)

(3) Small output charge : Qoss = 46 nC (typ.)

(4) Low drain-source on-resistance : RDS(ON) = 5.1 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current : IDSS = 10 µA (max) (VDS = 100 V)

(6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

Start of commercial production

2016-09

2019-10-18

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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