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TPH3206PD PDF预览

TPH3206PD

更新时间: 2024-11-21 12:56:43
品牌 Logo 应用领域
TYSEMI 光电二极管高压
页数 文件大小 规格书
8页 1546K
描述
TPH3206PD 是transphorm氮化镓GaN-HEMT功率器件;高压600V,电流9A,TO220封装。

TPH3206PD 数据手册

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TPH3206PD  
Distributors:www.zeztek.com/ for Sample and support  
PRODUCT SUMMARY (TYPICAL)  
GaN Power  
Low-loss Switch  
VDS (V)  
600  
0.15  
54  
RDS(on) ()  
Qrr (nC)  
D
Features  
Low Qrr  
Free-wheeling diode not required  
Quiet Tab™ for reduced EMI at high dv/dt  
GSD pin layout improves high speed design  
RoHS compliant  
G
S
High frequency operation  
D
Applications  
Compact DC-DC converters  
AC motor drives  
TO-220 Package  
Battery chargers  
Switch mode power supplies  
Absolute Maximum Ratings (TC=25 °C unless otherwise stated)  
Symbol  
ID25°C  
ID100°C  
IDM  
Parameter  
Limit Value  
Unit  
A
Continuous Drain Current @TC=25 °C  
Continuous Drain Current @TC=100 °C  
Pulsed Drain Current (pulse width:100 s)  
Drain to Source Voltage  
17  
12  
A
A
60  
VDSS  
VTDS  
VGSS  
PD25°C  
TC  
600  
V
Transient Drain to Source Voltage a  
750  
V
Gate to Source Voltage  
±18  
V
Maximum Power Dissipation  
W
°C  
°C  
°C  
96  
Case  
Operating Temperature  
Junction  
-55 to 150  
-55 to 175  
-55 to 150  
TJ  
TS  
Storage Temperature  
TCsold  
Soldering peak Temperature b  
260  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typical  
Unit  
RΘJC  
RΘJA  
Junction-to-Case  
Junction-to-Ambient  
°C /W  
°C /W  
1.55  
62  
Notes  
a: For 1 usec, duty cycle D=0.1  
b: For 10 sec, 1.6mm from the case  
www.transphormusa.com  
TPH3206PD  
March 12, 2015, JH  
1

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