Datasheet > TPH3202PD

TPH3202PD

更新时间： 2024-11-18 12:56:43

品牌	Logo	应用领域
TYSEMI		光电二极管
页数	文件大小	规格书
8页	1441K
描述
TPH3202PD是transphorm的氮化镓GaN功率器件；

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中文翻译

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数据手册

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TPH3202PD 数据手册

TPH3202PD

Distributors:www.zeztek.com/ for Sample and support

PRODUCT SUMMARY (TYPICAL)

GaN Power

Low-loss Switch

V_DS(V)

600

0.29

R_DS(on)()

Q_rr(nC)

Features

 Low Q_rr

 Free-wheeling diode not required

 Quiet Tab™ for reduced EMI at high dv/dt

 GSD pin layout improves high speed design

 RoHS compliant

 High frequency operation

Applications

 Compact DC-DC converters

 AC motor drives

TO-220 Package

 Battery chargers

 Switch mode power supplies

Absolute Maximum Ratings (T_C=25 °C unless otherwise stated)

Symbol

I_D25°C

I_D100°C

I_DM

Parameter

Limit Value

Unit

Continuous Drain Current @T_C=25 °C

Continuous Drain Current @T_C=100 °C

Pulsed Drain Current (pulse width:100 s)

Drain to Source Voltage

V_DSS

V_TDS

V_GSS

P_D25°C

T_C

600

Transient Drain to Source Voltage ^a

750

Gate to Source Voltage

±18

Maximum Power Dissipation

°C

Case

Operating Temperature

Junction

-55 to 150

-55 to 175

-55 to 150

T_J

T_S

Storage Temperature

T_Csold

Soldering peak Temperature ^b

260

°C

Thermal Resistance

Symbol

Parameter

Typical

Unit

R_ΘJC

R_ΘJA

Junction-to-Case

Junction-to-Ambient

2.3

°C /W

Notes

a: For 1 usec, duty cycle D=0.1

b: For 10 sec, 1.6mm from the case

www.transphormusa.com

TPH3202PD

March 12, 2015, JH

12 3 4 5 6 7 8

中文翻译

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