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TPH2R805PL PDF预览

TPH2R805PL

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 538K
描述
N-ch MOSFET, 45 V, 0.0028 Ω@10V, SOP Advance, U-MOSⅨ-H

TPH2R805PL 数据手册

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TPH2R805PL  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPH2R805PL  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) High-speed switching  
(2) Small gate charge : QSW = 22 nC (typ.)  
(3) Small output charge : Qoss = 55 nC (typ.)  
(4) Low drain-source on-resistance : RDS(ON) =2.1 m(typ.)(VGS = 10 V )  
(5) Low leakage current : IDSS = 10 µA (max)(VDS = 45 V )  
(6) Enhancement mode : Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance  
Start of commercial production  
2016-07  
©2016 Toshiba Corporation  
2016-12-26  
Rev.1.0  
1

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