Datasheet > TPH2R805PL

TPH2R805PL

更新时间： 2024-03-25 22:01:53

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	538K
描述
N-ch MOSFET, 45 V, 0.0028 Ω@10V, SOP Advance, U-MOSⅨ-H

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TPH2R805PL 数据手册

TPH2R805PL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPH2R805PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge : QSW = 22 nC (typ.)

(3) Small output charge : Qoss = 55 nC (typ.)

(4) Low drain-source on-resistance : RDS(ON) =2.1 mΩ (typ.)(VGS = 10 V )

(5) Low leakage current : IDSS = 10 µA (max)(VDS = 45 V )

(6) Enhancement mode : Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

Start of commercial production

2016-07

2016-12-26

Rev.1.0

12 3 4 5 6 7...9

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