TPH2R608NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH2R608NH
1. Applications
•
High-Efficiency DC-DC Converters
•
Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 28 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V)
(5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
VDSS
VGSS
ID
75
±20
(Note 1)
(Note 1), (Note 2)
(Note 1)
150
A
A
(Silicon limit)
(t = 100 µs)
(Tc = 25 )
ID
168
IDP
PD
500
A
142
W
W
W
mJ
A
(Note 3)
(Note 4)
(Note 5)
(Note 5)
PD
2.5
PD
0.8
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
EAS
IAS
149
120
Tch
Tstg
150
Storage temperature
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2014-12
©2019
Toshiba Electronic Devices & Storage Corporation
2019-10-18
Rev.3.0
1