5秒后页面跳转
TPH2R608NH PDF预览

TPH2R608NH

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 263K
描述
N-ch MOSFET, 75 V, 0.0026 Ω@10V, SOP Advance, U-MOSⅧ-H

TPH2R608NH 数据手册

 浏览型号TPH2R608NH的Datasheet PDF文件第2页浏览型号TPH2R608NH的Datasheet PDF文件第3页浏览型号TPH2R608NH的Datasheet PDF文件第4页浏览型号TPH2R608NH的Datasheet PDF文件第5页浏览型号TPH2R608NH的Datasheet PDF文件第6页浏览型号TPH2R608NH的Datasheet PDF文件第7页 
TPH2R608NH  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPH2R608NH  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 28 nC (typ.)  
(3) Low drain-source on-resistance: RDS(ON) = 2.1 m(typ.) (VGS = 10 V)  
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V)  
(5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance  
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
Power dissipation  
Power dissipation  
VDSS  
VGSS  
ID  
75  
±20  
(Note 1)  
(Note 1), (Note 2)  
(Note 1)  
150  
A
A
(Silicon limit)  
(t = 100 µs)  
(Tc = 25 )  
ID  
168  
IDP  
PD  
500  
A
142  
W
W
W
mJ  
A
(Note 3)  
(Note 4)  
(Note 5)  
(Note 5)  
PD  
2.5  
PD  
0.8  
Single-pulse avalanche energy  
Single-pulse avalanche current  
Channel temperature  
EAS  
IAS  
149  
120  
Tch  
Tstg  
150  
Storage temperature  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2014-12  
©2019  
Toshiba Electronic Devices & Storage Corporation  
2019-10-18  
Rev.3.0  
1

与TPH2R608NH相关器件

型号 品牌 获取价格 描述 数据表
TPH2R805PL TOSHIBA

获取价格

N-ch MOSFET, 45 V, 0.0028 Ω@10V, SOP Advance,
TPH2R903PL TOSHIBA

获取价格

N-ch MOSFET, 30 V, 0.0029 Ω@10V, SOP Advance,
TPH3202PD TYSEMI

获取价格

TPH3202PD是transphorm的氮化镓GaN功率器件;
TPH3205WS TYSEMI

获取价格

领先的氮化镓GaN功率器件TPH3205WS
TPH3206PD TYSEMI

获取价格

TPH3206PD 是transphorm氮化镓GaN-HEMT功率器件;高压600V,电
TPH3300CNH TOSHIBA

获取价格

N-ch MOSFET, 150 V, 0.033 Ω@10V, SOP Advance,
TPH-350 COOPER

获取价格

Electric Fuse, 350A, 170VDC, 100000A (IR), Inline/holder
TPH37.5A TOPSTEK

获取价格

Topstek Current Transducers
TPH375A TOPSTEK

获取价格

Topstek Current Transducers
TPH3R003PL TOSHIBA

获取价格

N-ch MOSFET, 30 V, 0.003 Ω@10V, SOP Advance,