Datasheet > TPH2R306PL1

TPH2R306PL1

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	705K
描述
N-ch MOSFET, 60 V, 0.0023 Ω@10V, SOP Advance(N), U-MOSⅨ-H

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TPH2R306PL1 数据手册

TPH2R306PL1

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TPH2R306PL1

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge : QSW = 19 nC (typ.)

(3) Small output charge : Qoss = 51 nC (typ.)

(4) Low drain-source on-resistance : RDS(ON) =1.7 mΩ (typ.)(VGS = 10 V )

(5) Low leakage current : IDSS = 10 µA (max)(VDS = 60 V )

(6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(N)

Start of commercial production

2020-04

2022-08-26

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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